Substrate etching method

Abstract

The invention provides a substrate etching method which includes the following steps: a main etching step: inletting an etching gas into a reaction chamber and starting an excitation power supply and a bias voltage power supply so as to etch and form a basic outline of a pattern on the substrate; an over etching step: continuing to inletting the etching gas into the reaction chamber and keeping the excitation power supply and the bias voltage power supply to be started so as to modify the feature of the pattern and enable the feature to meet technological demands. The substrate etching method is capable of reducing the quantity of spherical particles which fall off to the substrate in the whole technology proceeding process so that defects of the pattern feature of the substrate can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a substrate etching method. Background technique [0002] At present, the etching of substrates such as sapphire substrates using inductively coupled plasma (Inductively Coupled Plasma, hereinafter referred to as ICP) equipment mainly includes the following steps: [0003] The first steady flow step (Stable1) is used to ensure that the gas flow into the reaction chamber reaches a sufficient and stable state when the subsequent main etching step is illuminated; [0004] The main etching step (Main Etch) is used to etch the substrate to form the basic outline of the graphics; [0005] The second steady flow step (Stable2) has the same effect as the first transition step; [0006] The over etching step (Over Etch) is used to modify the graphic morphology so that its size and shape meet the process requirements. [0007] During the process of the above process, a large amount of etch...

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Problems solved by technology

[0009] For spherical particles, the above-mentioned method of cleaning the reaction chamber by manual or dry method has basically no cleaning effect, and spherical particles will basically appear in the process of each process, and the number can reach thousands when the number is large. A large number of spherical particles Once dropped on the substrate, it will cause serious topographical defects

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