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Electrode bending punch head with inclined plane structure and inclined plane type electrode bending method

A stamping head and electrode technology, which is applied in the semiconductor field, can solve the problems that the electrode bending of the IGBT module is difficult to be carried out accurately and quickly, and the size and height of the electrodes are different, so as to improve the quality of electrode bending, reduce electrode surface damage, and reduce scratches. rubbing effect

Inactive Publication Date: 2015-02-11
XIAN YONGDIAN ELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, due to the different application fields of IGBT modules, IGBT modules of various dimensions are widely used, and the shapes of their electrodes are also different, and the electrodes of each IGBT module have at least two sets of different electrodes, so the size of the electrodes , the position on the module and the height of the electrode after bending are not the same, which makes it difficult to bend the electrode of the IGBT module accurately and quickly

Method used

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  • Electrode bending punch head with inclined plane structure and inclined plane type electrode bending method
  • Electrode bending punch head with inclined plane structure and inclined plane type electrode bending method
  • Electrode bending punch head with inclined plane structure and inclined plane type electrode bending method

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Embodiment Construction

[0022] The upper part of the electrode bending punching head with inclined plane structure of the present invention is the connecting part, and the lower part is the electrode bending inclined surface, and the electrode pressing inclined surface is made of high hardness material, and its surface is covered with an electroplating layer.

[0023] Further, the edge of the electrode crimping bevel is in the form of a curved chamfer.

[0024] Preferably, the connecting part is a connecting cylindrical head with an orientation plane, and a positioning pin hole is arranged on it.

[0025] Further, the positioning pin hole is parallel to the orientation plane.

[0026] The present invention also provides an electrode bending method for an electrode bending punch head based on the above inclined plane structure, comprising the following steps:

[0027] Step 1: The longitudinal hydraulic rod column first drives the electrode bending slope to move downward. After reaching the predetermi...

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Abstract

Disclosed is an electrode bending punch head with an inclined plane structure. An upper portion of the electrode bending punch head is a connection portion, the lower portion of the electrode bending punch head is an electrode backfin inclined plane which is made of high-hardness materials, and the surface of the electrode backfin inclined plane is covered by an electroplated layer. According to an electrode bending method based on the electrode bending punch head, during the whole bending process, the electrode backfin inclined plane directly contacts with electrodes of an insulated gate bipolar translator (IGBT) module and bends and flattens the electrodes, so that heights of the bent electrodes can be conveniently controlled, heights of groups of the bent electrodes are identical, cladding layers on the surfaces of the electrodes are intact and free of scratches, various electrode bending requirements of the IGBT module are well met, and electrode bending qualities are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an electrode bending punch and an electrode bending method, in particular to an electrode bending punch with a slope structure and a slope-type electrode bending method based on the punch. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) has the performance characteristics of high frequency, high voltage, high current, especially easy to turn on and off, and is internationally recognized as the third revolution of power electronics technology. The most representative product has been developed to the sixth generation so far, and the commercialization has been developed to the fifth generation. [0003] The insulated gate bipolar transistor module is mainly used in the main circuit inverter of the frequency converter and all inverter circuits, that is, in DC / AC conversion. Today's new power electronic devices represented by IGBT modules are th...

Claims

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Application Information

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IPC IPC(8): B21D5/04
CPCB21D5/04
Inventor 周高
Owner XIAN YONGDIAN ELECTRIC
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