Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for testing contact thermal resistance among thin-layer materials based on 3-omega method

A thin-layer material and test method technology, applied in the direction of thermal development of materials, can solve the problems of difficult to guarantee measurement accuracy, complex formula derivation, and many factors of measurement results, achieve fast measurement, avoid complex formula derivation and calculation, geometric low size effect

Active Publication Date: 2014-09-10
NANJING UNIV OF SCI & TECH
View PDF4 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the experimental measurement method of thermal contact resistance, the traditional steady-state method is mainly used, but the steady-state method needs to insert a thermocouple into the upper and lower two samples to be tested during the measurement process. In order to obtain the axial temperature gradient of the sample, it is necessary Multiple temperature measurement points are arranged, so there are high requirements for the geometric dimensions of the sample, and it is difficult to measure the contact thermal resistance between thin-layer materials with a thickness of less than 50mm. up to 8 hours
Although various transient methods (mainly laser photothermal measurement method, laser flash method, and laser photoacoustic method) have the ability to measure the contact thermal resistance between thin-layer materials, there are many factors that affect the measurement results, and the derivation of the formula is complicated. Accuracy is difficult to guarantee

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for testing contact thermal resistance among thin-layer materials based on 3-omega method
  • Method for testing contact thermal resistance among thin-layer materials based on 3-omega method
  • Method for testing contact thermal resistance among thin-layer materials based on 3-omega method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] combine Figure 1 to Figure 6 :

[0025] A test method for contact thermal resistance between thin-layer materials based on the 3ω method, the test steps for realizing the method are as follows:

[0026] Step 1: Select the materials of the first sample to be tested 11 and the second sample to be tested 12, and select a third sample to be tested 13 that is the same material as the second sample to be tested 12;

[0027] Step 2: Make a heating and temperature measuring metal wire 21 on one side of the first sample to be tested 11, and make a heating and temperature measuring metal wire 22 on one side of the second sample to be tested. If the first sample to be tested 11 or The second sample to be tested 12 is a metal material, then first deposits a layer of insulating film on the surface of the heating and temperature measuring metal wire;

[0028] Step 3: Place the first sample to be tested 11 with its heating and temperature measuring metal wire 21 facing up on the th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for testing contact thermal resistance among thin-layer materials based on a 3-omega method. According to the method, the total thermal resistances of a to-be-measured sample pair and a contrast sample are respectively measured by virtue of the 3-omega method, and then the contact thermal resistance is calculated by virtue of a subtraction manner. The method comprises the following steps: overlapping a first to-be-measured sample and a third to-be-measured sample, so as to form the contact-thermal-resistance to-be-measured sample pair; taking a second to-be-measured sample as a contrast object; regulating the size of contact pressure between the first to-be-measured sample and the third to-be-measured sample by virtue of a pressure loading device; connecting a voltage testing unit with heating temperature-measuring metal wires on the surfaces of to-be-measured samples, measuring the total thermal resistances of the to-be-measured sample pair and the second to-be-measured sample, and finally carrying out subtraction so as to obtain the contact thermal resistance. The method has the advantages that the contact thermal resistance among the thin-layer materials can be rapidly measured, and a measurement principle is relatively simpler than the measurement principles of other transient methods.

Description

technical field [0001] The invention belongs to the technical field of contact thermal resistance measurement, in particular to a method for testing the contact thermal resistance between thin-layer materials based on the 3ω method. Background technique [0002] With the rapid development of the electronics industry, the packaging density of electronic devices is getting higher and higher, and the smaller and smaller packaging volumes make the heat dissipation problem of electronic equipment more and more prominent. Studies have pointed out that temperature is one of the main factors affecting the stability and reliability of electronic equipment in electronic systems, and 55% of failures are caused by unreasonable operating temperatures of devices. The contact thermal resistance is an important factor affecting the heat dissipation capability of electronic devices. The existence of contact thermal resistance will definitely hinder the transfer of heat flow on the contact in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N25/20
Inventor 宣益民李强麻景峰
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products