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Junction terminal structure of transverse high-voltage power semiconductor device

A technology of power semiconductors and lateral high voltage, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as breakdown, achieve the effect of improving withstand voltage, ensuring withstand voltage, increasing process steps and cost

Active Publication Date: 2014-07-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve is to propose a junction terminal structure of a lateral high-voltage power semiconductor device for the above-mentioned problem of premature breakdown at the curvature junction terminal of the traditional lateral high-voltage power semiconductor device

Method used

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  • Junction terminal structure of transverse high-voltage power semiconductor device
  • Junction terminal structure of transverse high-voltage power semiconductor device
  • Junction terminal structure of transverse high-voltage power semiconductor device

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Such as Figure 10 As shown, this example includes a linear junction terminal structure and a curvature junction terminal structure; the linear junction terminal structure is the same as the active region structure of a lateral high-voltage power semiconductor device, including the drain N + Contact region 1, N-type drift region 2, P-type substrate 3, gate polysilicon 4, gate oxide layer 5, P-well region 6, source N + Contact area 7, source P + Contact region 8; P-well region 6 and N-type drift region 2 are located on the upper layer of P-type substrate 3, wherein P-well region 6 is located in the middle, with N-type drift region 2 on both sides, and P-well region 6 and N-type drift region 2 The drift region 2 is connected; the two sides of the N-type drift region 2 away from the P-well region 6 are the drain N + Contact region 1, the upper layer of P-well region 6 has a source N connected to the metallized source + contact area 7 and the source P + contact region 8...

Embodiment 2

[0034] Such as Figure 11 As shown, the difference between this example and Example 1 is that the original L of the device at the terminal of the curvature junction is kept Psub In the case of the same length, the increase of L Ndrift length, becomes L Ndrift +ΔL, thereby increasing the area of ​​the N-type drift region. The working principle of this example is: when the substrate doping concentration is high, the area of ​​the N-type drift region can be appropriately increased, so that the P-type substrate and the N-type The withstand voltage of the drift region reaches the maximum.

Embodiment 3

[0036] Such as Figure 12 As shown, the difference between this example and Example 1 is that while increasing L Psub length and L Ndrift length, making it L Psub +ΔL 1 and L Ndrift +ΔL 2 , where ΔL 1 with ΔL 2 The sum is equal to ΔL, thereby increasing the area of ​​the P-type substrate region and the N-type drift region at the same time, so that the withstand voltage of the device can be optimized.

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Abstract

The invention relates to the technical field of semiconductor power devices, in particular to a junction terminal structure of a transverse high-voltage power semiconductor device. According to the junction terminal structure, by increasing the total area of a P-type substrate and an N-type shift region, at the position of a curvature junction terminal, of the device, the device is prevented from being used up in advance in the region of the P-type substrate, and the withstand voltage of the device at the position of the curvature junction terminal is guaranteed. The junction terminal structure of the transverse high-voltage power semiconductor device has the advantages that the influences on the withstand voltage of the whole device from the curvature junction terminal can be obviously reduced, the electric field, in a transitional region, of the device cannot be too high, the withstand voltage of the device is optimized by changing the area of the shift region or the area of the P-type substrate, and the withstand voltage of the device is guaranteed accordingly. The junction terminal structure of the transverse high-voltage power semiconductor device is particularly suitable for junction structures of transverse high-voltage semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a junction terminal structure of a lateral high-voltage power semiconductor device. Background technique [0002] With the increasing electrification of industry, the requirements for high voltage and high current devices are getting higher and higher. In order to improve the withstand voltage of the device, various junction termination structures have emerged to meet the withstand voltage requirements of the device. [0003] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the closed racetrack structure and interdigitated structure, there will be small curvature terminations in the curved part and the fingertip part, a...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/0619H01L29/7823H01L29/0692H01L29/4238H01L29/7835
Inventor 乔明文帅张昕薛腾飞齐钊吴文杰张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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