In-situ integration representation device of multiferroic material nanoscale domain structure
A nanoscale, multiferroic technology, which is applied in measuring devices, instruments, scanning probe microscopy, etc., can solve the problem of inability to achieve real-time and simultaneous detection, and it is difficult to realize in-situ and real-time detection of multiferroic material nanoscale electric domains. , integrated characterization and other issues, to achieve the effect of easy promotion and application, simple structure and high resolution
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[0054] Using the in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials according to the present invention, the micro-area ferroelectric domain and ferromagnetic domain structure of bismuth ferrite multiferroic materials (hereinafter referred to as tested multiferroic materials) For characterization, Figure 4 shows the test results. Figure 4(a) is an AFM image of the surface topography of the tested multiferroic material, and Figure 4(b) is obtained in situ at the corresponding region of the tested multiferroic material using the characterization device according to the present invention The image of the ferroelectric domain structure, Figure 4(c) is the image of the ferromagnetic domain structure obtained in situ in the corresponding region of the measured multiferroic material using the characterization device according to the present invention, and Figure 4(d) is the image of the ferromagnetic domain structure using According...
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