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In-situ integration representation device of multiferroic material nanoscale domain structure

A nanoscale, multiferroic technology, which is applied in measuring devices, instruments, scanning probe microscopy, etc., can solve the problem of inability to achieve real-time and simultaneous detection, and it is difficult to realize in-situ and real-time detection of multiferroic material nanoscale electric domains. , integrated characterization and other issues, to achieve the effect of easy promotion and application, simple structure and high resolution

Active Publication Date: 2014-07-02
江苏先进无机材料研究院
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Problems solved by technology

[0006] The current characterization methods of ferroelectric domains and ferromagnetic domains have the following limitations: the characterization of ferroelectric domains and ferromagnetic domain structures is completed by multiple sets of discrete devices, which cannot achieve real-time and synchronous detection
Therefore, the traditional characterization methods of the domain structure of multiferroic materials are difficult to realize the in-situ, real-time and integrated characterization of the nanoscale electric and magnetic domains of multiferroic materials.

Method used

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  • In-situ integration representation device of multiferroic material nanoscale domain structure
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Embodiment 1

[0054] Using the in-situ integrated characterization device for the nanoscale domain structure of multiferroic materials according to the present invention, the micro-area ferroelectric domain and ferromagnetic domain structure of bismuth ferrite multiferroic materials (hereinafter referred to as tested multiferroic materials) For characterization, Figure 4 shows the test results. Figure 4(a) is an AFM image of the surface topography of the tested multiferroic material, and Figure 4(b) is obtained in situ at the corresponding region of the tested multiferroic material using the characterization device according to the present invention The image of the ferroelectric domain structure, Figure 4(c) is the image of the ferromagnetic domain structure obtained in situ in the corresponding region of the measured multiferroic material using the characterization device according to the present invention, and Figure 4(d) is the image of the ferromagnetic domain structure using According...

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Abstract

The invention discloses an in-situ integration representation device of a multiferroic material nanoscale domain structure. The in-situ integration representation device comprises an atomic force microscopy in-situ incentive platform and an in-situ detection platform, the atomic force microscopy in-situ incentive platform is used for multiferroic structure in-situ incenting on detected multiferroic materials to enable an incenting point of the detected multiferroic materials to generate domain structure imaging signals, and the in-situ detection platform carries out in-situ real-time detection and data processing on the domain structure imaging signals and displays the in-situ imaging representation result of the multiferroic domain structure in real time. Through the device, in-situ, lossless, real-time, dynamic and integrated representation of a multiferroic material nanoscale ferroelectric domain and a ferromagnetic domain can be achieved.

Description

technical field [0001] The invention belongs to the field of instrument development, and in particular relates to an in-situ integrated characterization device for nanoscale domain structures of multiferroic materials. Background technique [0002] Multiferroic materials refer to a class of compounds that exist in two or more ordered states of ferroelectricity, ferromagnetism and ferroelasticity at a certain temperature. Among them, the most research significance and application value are multiferroic materials with both ferroelectricity and ferromagnetism. [0003] The simultaneous existence of these two ordered states will produce a unique magnetoelectric coupling effect in the material system, making multiferroic materials have rich physical properties. At the same time, the spontaneous magnetoelectric coupling effect caused by the two ordered subsystems inside the system enables the material to control its spontaneous magnetization through an electric field and its spon...

Claims

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Application Information

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IPC IPC(8): G01Q60/24
Inventor 赵坤宇曾华荣于会珠殷庆瑞李国荣
Owner 江苏先进无机材料研究院
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