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Copper indium gallium diselenide thin film cell co-evaporation linear source array configuration

A thin-film battery, copper indium gallium selenide technology, applied in vacuum evaporation plating, circuit, photovoltaic power generation, etc., can solve the problems of low flexibility of coating, inability to realize matching process, and inability to realize flexible coating process, etc. To achieve the effect of improving the adjustment flexibility

Active Publication Date: 2014-06-18
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The point source type is that the evaporation sources are divided into two rows and arranged under the two sides of the glass substrate. Each raw material such as copper, indium, and gallium is placed in one evaporation source. The coating flexibility is not high, and some special coatings cannot be realized. Proportioning process
The line source type is arranged horizontally on the traveling route of the glass substrate in a strip form, and copper, indium, gallium and other raw materials are mixed and placed in the same evaporation source, which also cannot realize the flexible ratio process during coating

Method used

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  • Copper indium gallium diselenide thin film cell co-evaporation linear source array configuration
  • Copper indium gallium diselenide thin film cell co-evaporation linear source array configuration
  • Copper indium gallium diselenide thin film cell co-evaporation linear source array configuration

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Embodiment 1

[0024] An arrangement of co-evaporation linear source arrays for copper indium gallium selenide thin film batteries, such as figure 1 , figure 2 As shown, it includes a glass substrate 1 and linear evaporation sources 2, 3, and 4. The linear evaporation sources 2, 3, and 4 containing different raw materials are arranged longitudinally along the moving direction of the glass substrate 1 to form a linear evaporation source column. The linear evaporation source column is One column is located directly below the glass substrate 1 . The linear evaporation sources 2, 3 and 4 are cuboids. The linear evaporation sources 2, 3, 4 are provided with three parallel slit-shaped evaporation belts 5. Along the lower sides of the two sides of the glass substrate 1 there are corresponding evaporation zones 5 . The three parallel slit-shaped evaporation zones 5 correspond to three separate heating sources. The raw material in each linear evaporation source constituting the linear evaporatio...

Embodiment 2

[0026] An arrangement of co-evaporation linear source arrays for copper indium gallium selenide thin film batteries, such as figure 1 , image 3 As shown, it includes a glass substrate 1 and linear evaporation sources 2, 3, and 4. The linear evaporation sources 2, 3, and 4 containing different raw materials are arranged longitudinally along the moving direction of the glass substrate 1 to form a linear evaporation source column. The linear evaporation source column is One column is located directly below the glass substrate 1 . The linear evaporation sources 2, 3, 4 are cylinders. The linear evaporation sources 2, 3, 4 are provided with an array of point-shaped evaporation holes 6, and the point-shaped evaporation holes 6 are divided into three rows along the running direction of the glass substrate. A row of dot-shaped evaporation holes 6 are respectively corresponding to the lower sides along the two sides of the glass substrate 1 . Three rows of dot-shaped evaporation ho...

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Abstract

The invention relates to a copper indium gallium diselenide thin film cell technology, in particular to a linear source array configuration in the copper indium gallium diselenide thin film cell co-evaporation technology. The copper indium gallium diselenide thin film cell co-evaporation linear source array configuration comprises a glass substrate and linear evaporation sources, wherein the linear evaporation sources containing different raw materials are arranged longitudinally along the moving direction of the glass substrate and form a linear evaporation source array, and the linear evaporation sources are aligned in a line and are located right under the glass substrate. The linear evaporation sources are cylinders or cuboids, and are provided with evaporation zones in a long and narrow seam shape or point-shaped evaporation holes. The copper indium gallium diselenide thin film cell co-evaporation linear source array configuration can effectively set evaporation regions according to a preset technological ratio, and greatly improve the adjusting flexibility of a raw material ratio in a cell production technology.

Description

technical field [0001] The invention relates to a copper indium gallium selenium thin film battery technology, in particular to an arrangement of a linear source array in a copper indium gallium selenide thin film battery co-evaporation process. Background technique [0002] The future market development of photovoltaic applications, especially the application of photovoltaic power plants connected to the grid, depends critically on the potential to reduce the production cost of solar cells. The production process of thin-film solar cells consumes less energy, which has the potential to greatly reduce raw material and manufacturing costs; at the same time, thin-film solar cells can still generate electricity under low light conditions. Therefore, the current market demand for thin-film solar cells is gradually increasing, and the technology of manufacturing thin-film solar cells has become a research hotspot in recent years. [0003] Today's photovoltaic thin film batteries...

Claims

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Application Information

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IPC IPC(8): H01L21/203H01L31/18C23C14/24
CPCC23C14/246H01L21/02631H01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 李鸿儒于大洋
Owner 紫石能源有限公司
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