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Light emitting diode manufacturing method

A technology of light-emitting diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as the influence of epitaxial layer growth

Inactive Publication Date: 2014-05-21
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above process, defects tend to be concentrated in the epitaxial layer at the top of the protrusion, thereby affecting the growth of the subsequent epitaxial layer.

Method used

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  • Light emitting diode manufacturing method
  • Light emitting diode manufacturing method
  • Light emitting diode manufacturing method

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Experimental program
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Embodiment Construction

[0024] The manufacturing method of the light emitting diode of the present invention will be further described below with reference to the figures.

[0025] See figure 1 , first provide a sapphire substrate 110 . The surface of the sapphire substrate 110 has a plurality of protrusions 111 . In this embodiment, the cross section of the protruding portion 111 is semicircular. According to needs, the cross section of the protruding portion 111 may also be triangular, trapezoidal or other polygonal.

[0026] See figure 2 , growing an undoped GaN layer 120 on the surface of the sapphire substrate 110 , the undoped GaN layer 120 does not completely cover the protruding portion 111 to expose a partial area of ​​the protruding portion 111 . In this embodiment, the undoped GaN layer 120 includes a first portion 121 located between two adjacent protrusions 111 and a second portion 122 located at the top of the protrusions 111 .

[0027] See image 3 , etch the undoped GaN layer 1...

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Abstract

The invention relates to a light emitting diode manufacturing method. The method comprises steps that: a sapphire substrate is provided, and multiple projecting parts are formed at a surface of the sapphire substrate; one non-doped GaN layer is formed at the surface of the sapphire substrate, the non-doped GaN layer completely or incompletely covers the projection parts to expose partial regions of the projecting parts; the non-doped GaN layer at top regions of the projecting parts is etched to expose the top regions of the projecting parts; an N type GaN layer, an active layer and a P type GaN layer are sequentially formed on the top regions of the projecting parts and the non-doped GaN layer. Through the method, the non-doped GaN layer at the top regions of the projecting parts is etched. As defect-concentrated parts are removed, crystal defects of the light emitting diodes are reduced.

Description

technical field [0001] The invention relates to a method for manufacturing a light-emitting diode, in particular to a method for manufacturing a light-emitting diode that can effectively reduce crystal defects. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is an optoelectronic semiconductor element that can convert current into a specific wavelength range. Light-emitting diodes can be widely used as light sources in the field of lighting because of their advantages such as high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] During the epitaxial growth process of LEDs, how to reduce the crystal defects of LED grains is a problem that people need to consider. One method of producing low-defect LED dies is to use a patterned sapphire substrate. That is, a plurality of protrusions are formed on the sapphire substrate, and the plurality of protrusions ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L21/0242H01L21/0243H01L21/02458H01L21/0254H01L21/02658H01L33/20H01L33/007H01L33/12
Inventor 邱镜学林雅雯凃博闵黄世晟
Owner ZHANJING TECH SHENZHEN
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