A System for Precisely Controlling the Uniformity of Ion Implantation

Abstract

The invention discloses a method of accurately controlling uniform distribution of ion implantation, relates to an ion implantation machine and belongs to the semiconductor manufacturing field. The method comprises high-precision multi-channel I / V acquisition and conversion, horizontal direction beam distribution density detection and correction, beam parallelism detection and a vertical scanning control algorithm. The system is mainly formed by a multi-coil adjusting magnet, a multistage adjusting magnetic pole, a moving Faraday cup, a sampling Faraday cup, a linear motor and a PMAC motion control system. By using the method of the invention, accurate detection of ion dosage of ion implantation can be automatically realized; uniformity control of ion implantation distribution and accuracy control of the dosage are automatically realized too.

Description

technical field [0001] The invention relates to a method for controlling the uniformity of an ion implanter, relates to an ion implanter, and belongs to the field of semiconductor equipment manufacturing. Background technique [0002] The uniformity control technology of ion implanter is one of the key technologies of ion implanter. Its working principle is based on various control and measurement methods and devices to uniformly and accurately implant ions into the entire wafer surface according to the set dose. However, in reality, such a high-uniform broadband beam cannot be obtained from the ion source, and the beam passing through the analysis is affected by many factors such as space charge effect, adjustment unit, and space interference, and finally reaches the target after correcting the magnetic field and decelerating. The broadband beam must not meet the uniformity and parallelism required by the process, so it is necessary to design a suitable uniformity and paral...

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Problems solved by technology

However, in reality, such a high-uniform broadband beam cannot be obtained from the ion source, and the beam passing through the analysis is affected by many factors such as space charge effect, adjustment unit, and space interference, and finally reaches the target after correcting the magnetic field and decelerating. The broadband beam must not meet the uniformity and parallelism required by the process, so it is necessary to design a suitable uniformity and parallelism correction mechanism, so that in actual work, according to the final beam uniformity and parallelism parameters measured at the target position, Closed-loop optimization adjusts the corresponding parameters of the broadband beam, and finally obtains the uniformity and parallelism indicators that meet the process requirements

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