High-power MOSFET driving circuit

Abstract

The invention relates to a high-power MOSFET driving circuit. PWM input signals pass through a hardware deadzone circuit, a pulse blocking circuit, an optical coupling isolation circuit and a peripheral circuit in sequence to generate the gate drive signals of the Mosfet of an upper bridge arm and the Mosfet of a lower bridge arm, the hardware deadzone circuit generates hardware deadzone time, the pulse blocking circuit is used for blocking pulse signals when a protection state occurs, the hardware deadzone circuit, the optical coupling isolation circuit, the peripheral circuit and a bootstrap circuit are combined to form the high-power MOSFET driving circuit used for driving the high-power Mosfets, and the measure of additionally installing the bootstrap circuit is taken to prevent the Mosfet gate-to-source voltage of the upper bridge arm from floating. The turn-on and turn-off speed of the Mosfets is improved, and therefore the turn-on and turn-off losses of the Mosfets are reduced. A blocking and judging circuit is used for blocking drive of hardware, and therefore the Mosfets are protected, the driving capacity of the driving circuit is improved, the work efficiency of the circuit is improved, and therefore cost is lowered.

Description

technical field [0001] The invention relates to an electric energy conversion technology, in particular to a high-power MOSFET driving circuit. Background technique [0002] The development of power electronic technology is growing day by day, new power electronic equipment emerges in an endless stream, and the demand for power switch tubes continues to increase. The power MOSFET device has developed rapidly and has become the mainstream power semiconductor switching device in the field of small and medium power applications. It has high withstand voltage, low conduction loss, and low operating frequency. As an important switching device in power electronics technology, power MOSFETs are widely used in converters. The research on power MOSFET is particularly important, but the driving circuit at this stage can be divided into two types according to whether it is electrically isolated or not. The non-isolated driving circuit cannot realize the electrical isolation between th...

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the problem of high cost and fixed dead time of high-current MOSFET drive circuit, and proposes a high-power MOSFET drive circuit, which has better effect and greater drive capability, and speeds up the turn-on and turn-off time, greatly Reduced turn-on and turn-off losses of Mosfet

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