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PiNiN structure thyristor laser

A thyristor and laser technology, applied in the field of thyristor lasers, can solve the problems of large device threshold and low power, and achieve the effect of broadening the wavelength range

Inactive Publication Date: 2014-03-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, research on thyristor lasers is mainly focused on the InP material system, and its laser emission wavelength is mainly concentrated around the 1.55 μm band, but the large threshold and low power of these devices have always limited their applications.

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] figure 1 It is a sectional view of a PiNiN structure thyristor laser proposed according to the present invention. Such as figure 1 As shown, the laser consists of sequentially stacked N-type electrode layer 1, N-type substrate 2, N-type buffer layer 3, first N-type heavily doped layer 4, first undoped active region layer 5, second N-type heavily doped layer 6 , second undoped active region layer 7 , P-type heavily doped layer 8 , P-type contact layer 9 and P-type electrode layer 10 .

[0029] The N-type electrode layer 1 can be made of materials capable of forming N-type ohmic contacts, such as Au / Zn or AuGeNi. Its thickness should be set between 150nm-1000nm, preferably 300nm. It can be prepared by thermal eva...

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Abstract

The invention discloses a PiNiN structure thyristor laser capable of presenting thyristor electrical characteristics and laser optical characteristics and belongs to the field of semiconductor photoelectron. The laser comprises an N type electrode, an N type substrate, an N type buffer layer, a first N type high doping layer, a first undoped active region, a second N type high doping layer, a second undoped active region, a P type high doping layer, a P type contact layer and a P type electrode which are all sequentially stacked. High doping N layers, high doping P layers and undoped i layers are introduced into the thyristor laser, and the high-power and low-threshold laser optical characteristics can be obtained whole the thyristor electrical characteristics are obtained.

Description

technical field [0001] The invention relates to a thyristor laser with PiNiN structure. The device not only has the electrical characteristics of a thyristor, but also has the optical characteristics of a laser. Background technique [0002] With the development of optical switch devices, a series of important research results have been obtained for the pnpn structure optical switch as the main research object. Optical switches have important applications in optical memory, optical interconnection, routing, neural networks and other fields. In optical switching devices, optical thyristors have many advantages, such as fast switching speed, low switching energy consumption, etc. Current major researches are focused on faster switching speed and lower switching energy consumption. [0003] Photothyristor lasers can not only act as optical switches, but also emit laser light. Because the carriers in the middle layer of the traditional pnpn structure thyristor cannot be exhau...

Claims

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Application Information

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IPC IPC(8): H01S5/34
Inventor 王火雷丁颖王宝军边静王圩潘教青
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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