Method for improving photoetching process used on Al2O3 medium

Abstract

The invention discloses a method for improving a photoetching process used on an Al2O3 medium. An Al2O3 medium layer is easily corroded by an alkali developing solution containing tetramethylammonium hydroxide so as to influence the performance of a device. The method comprises the steps of adding a concentrating solution of silicon, with a volume percent of 0.6-1.4 percent, and an ammonium persulfate (NH4)2S2O8, with a volume percent of 0.1-0.3 percent into the alkali developing solution containing tetramethylammonium hydroxide for improving the developing solution; and developing exposed photoresist on the Al2O3 by using the improved developing solution. By using the method, the thickness of the Al2O3 medium layer in a photoetching process with the change of the developing time is kept unchangeable, and the surface of the Al2O3 medium layer is kept smooth; according to the method, the stability and repetitive rate are good.

Description

technical field [0001] The present invention relates to an improved method for Al 2 o 3 The method of photolithography process on the dielectric layer, especially Al 2 o 3 The dielectric layer is easily corroded by an alkaline developer containing tetramethylammonium hydroxide (TMAH), based on the protection of Al 2 o 3 Photolithographic methods for dielectric layers. Background technique [0002] For a long time, silicon dioxide (SiO 2 ) has always been the material of choice for dielectric layers in semiconductor devices. However, with the gradual miniaturization of integrated circuits and devices, technical bottlenecks have been encountered in device manufacturing. The physical thickness of the dielectric layer in the device should be correspondingly reduced to less than 2nm. At this time, the quantum tunneling effect will cause electrons to tunnel from the silicon-based substrate to the electrode, causing a huge leakage current. In this case, the semiconductor dev...

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Problems solved by technology

However, because the reaction principle of the photoresist commonly used in the laboratory is an acid-base reaction, and Al 2 o 3 It is easy to be corroded and affect the performance of the device, so it is required to avoid Al as much as possible during the experiment. 2 o 3 Not to be corroded, the usual way is to change another kind of photoresist that polymerizes or polarizes to Al 2 o 3 Photolithography, but the existing commercial polymerization or polar reaction photoresists are relatively expensive, and the process tolerance is relatively small, and the requirements for experiments are relatively high

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