Silicon carbide preparation method

A technology of silicon carbide and carbon source, applied in the direction of silicon carbide, carbide, etc., can solve the problems of high pollution of silicon carbide and low purity of silicon carbide, and achieve the effects of improving purity, fast reaction speed and large contact area.

Inactive Publication Date: 2014-01-29
TAIZHOU BEYOND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The silicon carbide produced by this method pollutes the environment very much, and the purity of silicon carbide is not high

Method used

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  • Silicon carbide preparation method
  • Silicon carbide preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The preparation method of silicon carbide uses silicon dioxide and pure carbon as raw materials. The silicon dioxide is reduced by carbon at high temperatures to produce solid silicon carbide and gaseous carbon dioxide, and ash, impurity gas and powder are released. The temperature and speed of this reaction are determined by the size of the silica and the distance between the silica and the carbon element of the reducing material: the smaller the silica and the shorter the distance between the silica and the carbon element, the higher the temperature required for the reaction. The lower, the faster.

[0043] To this end, the present invention adopts the following steps to realize the production of silicon carbide: completely wrap the silica 1 with a carbon source containing carbon and make raw material particles 3; and react the raw material particles 3 at high temperature to generate silicon carbide. The main component of silica 1 is silicon dioxide. In this example, si...

Embodiment 2

[0058] According to our experiments, although the impurities contained in the silicon carbide produced by the reaction are mainly derived from silicon dioxide and carbon element raw materials, when carbon is used as a heating element, it also includes a carbon electrode. In fact, the ash produced after the reaction has an effect on the purity of silicon carbide. The impact is very big. That is, in the reducing atmosphere formed by heating the carbon element, while the silica is reduced, the ash as the residue is also reduced by the surrounding reducing atmosphere, and the generated reducing element diffuses and penetrates into the generated silicon carbide, and the generated silicon carbide Silicon carbide pollution results in low purity of silicon carbide.

[0059] In this case, the present invention includes the use of equipment equipped with plasma generator 4 to produce silicon carbide. The plasma generator 4 can generate a high temperature of 3000 degrees Celsius. The raw ...

Embodiment 3

[0066] When the plasma generator 4 is used as a high-temperature source to heat and prepare silicon carbide, the present invention further proposes a method for preparing silicon carbide in a variety of raw material forms.

[0067] A method for preparing silicon carbide includes directly putting carbon source 2 and silica 1 or metallic silicon or a mixture of both into a plasma flame for heating reaction at the same time, thereby generating silicon carbide. In this method, the carbon source 2 and the silica 1 or the metallic silicon are directly injected into the plasma flame through their respective channels at the same time, and silicon carbide can be generated as long as the two are fully mixed after being injected.

[0068] Specifically, the carbon source 2 is a substance whose carbon element undergoes a reduction reaction or a carbonization reaction in the reaction with silicon element. The carbon source 2 is a gaseous carbon source 2, and the gaseous carbon source 2 is one or...

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Abstract

The invention provides a preparation method of silicon carbide, and belongs to the technical field of semiconductor preparation. The invention aims at solving a problems of severe pollution and poor silicon carbide product purity of existing silicon carbide preparation methods. The method comprises the steps that: silica or metal silicon or a mixture of the two is completely coated by using a carbon source comprising carbon element, and raw material particles are prepared; and the raw material particles are subjected to a reaction under high temperature, such that silicon carbide is produced. The invention also discloses a method for preparing silicon carbide by using a device equipped with a plasma generation device. The invention also comprises a method for directly adding the carbon source and silica or metal silicon or the mixture of the two into plasma flame for carrying out a heating reaction and further producing silicon carbide. The invention also comprises a silicon carbide preparation method comprising a purification step. With the method, environment pollution can be avoided, and silicon carbide purity can be improved.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor preparation, and relates to a method for preparing silicon carbide as a raw material of a semiconductor device substrate. Background technique [0002] The existing silicon carbide preparation method is to spread a layer of carbon on the periphery of the quartz sand, then a layer of quartz sand on the outside of the carbon, and then a layer of coal or petroleum coke as a raw material carbon layer, each layer is laid The thickness of the quartz sand and the carbon layer is different. After being laid, it is heated at a high temperature for more than 7 days to form SiC through the reaction of silicon dioxide and carbon. However, there are a large amount of metal impurities and ash in the quartz sand and carbon. A chemical reaction has also taken place, producing yellow, red and other colored smoke, and these impurities also have a greater impact on the purity of SiC itself. After that, the SiC is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C01B32/956C01B32/97
Inventor 星野政宏
Owner TAIZHOU BEYOND TECH
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