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Gainp/gaas/ingaas/ge four-junction solar cell and preparation method thereof

A solar battery and sub-battery technology, applied in the field of solar batteries, can solve the problems of increasing battery production cost, increasing battery production cost and difficulty, and small absorption coefficient, so as to achieve the effects of improving battery efficiency, reducing difficulty, and reducing heat loss

Active Publication Date: 2016-08-03
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, from the perspective of lattice matching, the bonding of GaInP / GaAs (1.9 / 1.42eV) based on GaAs substrate and InGaAsP / InGaAs (1.05 / 0.74eV) double junction cell on InP substrate is used. Wafer bonding cells require GaAs and InP two substrates, and the absorption coefficient of InGaAsP and InGaAs matched with the InP lattice is small, and it is necessary to grow an epitaxial layer with a thickness of nearly 6 microns, which greatly increases the production cost of the cell; how to realize a reasonable multi-junction solar cell Combining bandgap and reducing current mismatch without increasing the cost and difficulty of cell manufacturing has become an urgent problem to be solved for current III-V solar cells

Method used

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  • Gainp/gaas/ingaas/ge four-junction solar cell and preparation method thereof
  • Gainp/gaas/ingaas/ge four-junction solar cell and preparation method thereof
  • Gainp/gaas/ingaas/ge four-junction solar cell and preparation method thereof

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no. 1 Embodiment approach

[0024] figure 1 Shown is the structure diagram of the GaInP / GaAs / InGaAs / Ge four-junction solar cell provided in this specific embodiment.

[0025] This specific embodiment provides a GaInP / GaAs / InGaAs / Ge four-junction solar cell grown in a front-mount manner, and the bandgap combination is 1.90eV / 1.42eV / ~1.00eV / 0.67eV. The GaInP / GaAs / InGaAs / Ge four-junction cell solar cell includes Ge sub-cells 30, InGaAs or GaInP nucleation layer 03, InGaAs buffer layer 04, first tunnel junction 31, graded transition layer 07, InGaAs sub-cells arranged in sequence. battery 32 , (In)GaAs bonding layer 12 , GaAs or GaInP bonding layer 17 , GaAs sub-cell 33 , second tunnel junction 34 , GaInP sub-cell 35 and GaAs contact layer 28 .

[0026] The Ge sub-cells 30 and the InGaAs sub-cells 32 are sequentially arranged on the Ge substrate in a direction away from the Ge substrate, forming first double-junction solar cells with bandgap energies of 1.0 eV and 0.67 eV respectively. The GaAs sub-cells 3...

no. 2 Embodiment approach

[0040] This specific embodiment provides a method for preparing a GaInP / GaAs / InGaAs / Ge four-junction solar cell using a front-mounting method. figure 2 Shown is the flow chart of the preparation method steps of the GaInP / GaAs / InGaAs / Ge four-junction solar cell provided in this specific embodiment, and then figure 2 The steps shown are described in detail.

[0041] Step S201, providing a sub-battery.

[0042] Step S201 further includes the steps of: providing a p-type Ge substrate used as the first base region 01 of the Ge sub-cell 30; forming a first emitter region 02 of Ge by diffusion of P or As elements on the Ge substrate to form Gelatin battery 30.

[0043] Step S202 , growing an InGaAs or GaInP nucleation layer, an InGaAs buffer layer, a first tunnel junction, a graded transition layer, an InGaAs subcell, and an (In)GaAs bonding layer on the surface of the Ge subcell in sequence. The structural diagram of the GaInP / GaAs / InGaAs / Ge four-junction solar cell formed afte...

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Abstract

The invention provides a GaInP / GaAs / InGaAs / Ge quadruple-junction solar battery. The band-gap energies of the quadruple-junction solar battery are respectively 1.89 electron volts (eV), 1.42eV, 1.0Ev and 0.67eV. The quadruple-junction solar battery comprises a Ge sub-battery, a first tunnel junction, a gradual transition layer, an InGaAs sub-battery, an (In) GaAs bonding layer, a GaAs or GaInP bonding layer, a GaAs sub-battery, a second tunnel junction and a GaInP sub-battery. The invention further provides a GaInP / GaAs / InGaAs / Ge quadruple-junction solar battery preparation method. The method includes a first step of providing the Ge sub-battery, a second step of growing a nucleating layer, a first buffer layer, the first tunnel junction, the gradual transition layer, the InGaAs sub-battery and the (In) GaAs bonding layer on the surface of the Ge sub-battery in sequence, a third step of providing a GaAs substrate, a fourth step of growing a second buffer layer, a sacrificial layer, the GaAs or GaInP bonding layer, the GaAs sub-battery, the second tunnel junction, the GaInP sub-battery and a GaAs contact layer on the GaAs substrate in sequence, a fifth step of peeling the GaAs substrate off, and a sixth step of bonding the (In) GaAs bonding layer and the GaAs or GaInP bonding layer.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a GaInP / GaAs / InGaAs / Ge four-junction solar cell and a preparation method thereof. Background technique [0002] As an ideal green energy material, solar cells have become a research hotspot in various countries. In order to promote the further practical application of solar cells, improving their photoelectric conversion efficiency is an effective means to reduce the cost of power generation. The use of sub-cells with different bandgap widths in series in stacked cells can greatly improve the utilization rate of sunlight. At present, the system with more research and more mature technology is the GaInP / GaAs / Ge triple-junction cell. The highest conversion efficiency achieved so far is 32%-33%. However, the Ge-bottom cell in the triple-junction cell covers a wider spectrum, and its short-circuit current is relatively large. In order to achieve current matching with other sub-cells, the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0725H01L31/074H01L31/0328H01L31/18
CPCY02E10/50Y02P70/50
Inventor 赵勇明董建荣李奎龙孙玉润曾徐路于淑珍赵春雨杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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