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Hybrid storage device, its control method, and manufacturing method

A technology of mixed storage and control methods, applied in static memory, digital memory information, information storage, etc., can solve the problem that users cannot choose flexibly, and achieve the effect of being conducive to widespread promotion and application, improving performance and reducing costs

Active Publication Date: 2015-08-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In the process of realizing the present invention, the applicant realized that the existing technology has the following technical defects: the traditional storage array can only implement one storage method, and cannot flexibly choose according to user needs

Method used

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  • Hybrid storage device, its control method, and manufacturing method
  • Hybrid storage device, its control method, and manufacturing method
  • Hybrid storage device, its control method, and manufacturing method

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. While illustrations of parameters including particular values ​​may be provided herein, it should be understood that parameters need not be exactly equal to the corresponding values, but rather may approximate the values ​​within acceptable error margins or design constraints.

[0027] In an exemplary embodiment of the present invention, a hybrid memory device is proposed. Figure 3A It is a schematic diagram of a connection relationship of a hybrid storage device according to an embodiment of the present invention. Such as Figure 3A As shown, the hybrid memory device in this embodiment includes: a resistive memory cell (RRAM cell) and a ferroelectric memory cell (FeRAM cell); the RRAM cell is formed on the drain of the F...

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Abstract

The invention discloses a hybrid memory device, and a control method and a preparation method thereof. The hybrid memory device comprises a ferroelectric memory cell and a resistance random access memory cell formed on a drain electrode of the ferroelectric memory cell. The hybrid memory device is switched between the two memory modes. In a first memory mode, the resistance random access memory cell is used as a memory module and the ferroelectric memory cell is used as a gating module; and in a second memory mode, the resistance random access memory cell is in a low resistance state and the ferroelectric memory cell is used as used as the memory module. The hybrid memory device takes the advantages of a FeRAM memory mode and an RRAM memory mode comprehensively and two different modes are realized on a single chip, thereby meeting memory needs of different modes.

Description

technical field [0001] The invention relates to the technical field of memory in the microelectronics industry, and in particular to a hybrid memory device capable of realizing the combination of two storage modes—ferroelectric storage mode and resistive storage mode, as well as a control method and a preparation method thereof. Background technique [0002] The current semiconductor memory market is represented by volatile dynamic random access memory (DRAM), static random access memory (SRAM) and non-volatile "flash memory" memory (Flash). With the development and popularization of various portable digital products such as mobile storage devices, mobile phone communication devices, and digital cameras, the market demand for non-volatile data storage has further increased. In order to improve storage density and data storage reliability, based on traditional floating gate Structured Flash memory is facing severe challenges. To this end, the industry has conducted a lot of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22
CPCG11C13/0002G11C11/005G11C11/22
Inventor 刘明许中广霍宗亮朱晨昕谢常青
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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