A kind of polysilicon wafer texturing cleaning process method

Abstract

The invention discloses a texturing and cleaning process method of a polysilicon wafer. The method comprises the following steps of 1, firstly, putting the polysilicon wafer in a mixing solution of HF (hydrogen fluoride) and HNO3 (hydrogen nitrate), and soaking; 2, putting the polysilicon wafer corroded by acid into pure water, and cleaning; 3, putting the polysilicon wafer in an alkaline solution, carrying out alkaline corrosion treatment, adding a texturing additive into the alkaline solution, and carrying out secondary texturing on the polysilicon wafer; 4, putting the polysilicon wafer corroded by alkali into the pure water, and cleaning; 5, putting the polysilicon wafer in a mixing solution of HCl (hydrogen chloride) and HF, and soaking; 6, putting the polysilicon wafer corroded by the acid into the pure water, and cleaning; and 7, drying the treated polysilicon wafer. The process method has the advantages that on the premise of not changing other processes, the final converting efficiency of the polysilicon wafer is improved by 0.2% to 0.3%, and the purpose of final efficiency stacking of a battery sheet is realized.

Description

technical field [0001] The invention relates to the field of cleaning and drying equipment for solar silicon wafers, in particular to a texturing and cleaning process for polycrystalline silicon wafers used in the photovoltaic industry. Background technique [0002] Texturing and cleaning are required in the production of polysilicon wafers. The traditional process includes low-temperature high-concentration acid solution velvet, normal temperature low-concentration acid solution velvet, dilute alkali washing, ion removal and passivation. In the above-mentioned traditional process method, to improve the conversion efficiency of the battery sheet by 0.2-0.3%, SE (selective emitter cell technology), back polishing (the back of the diffused silicon wafer is chemically polished to increase the reflectivity to 30%) Above), DP (printing the gate line of the silicon wafer twice), back passivation (plating a passivation layer on the back of the silicon wafer) and other high-cost co...

AI Technical Summary

Problems solved by technology

In the above-mentioned traditional process method, to improve the conversion efficiency of the battery sheet by 0.2-0.3%, SE (selective emitter cell technology), back polishing (the back of the diffused silicon wafer is chemically polished to increase the reflectivity to 30%) Above), DP (printing the gate lines of the silicon wafer twice), back passivation (plating a passivation layer on the back of the silicon wafer) and other high-cost complex processes increase the manufacturing cost, and the product quality is difficult to control

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