Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of 8-inch <110> magnetic field Czochralski single crystal

A technology of magnetic field Czochralski and single crystal, which is applied in the field of preparation of 8-inch magnetic field Czochralski single crystal, which can solve the problems of low production efficiency and low product quality, achieve cost saving, increase the crystallization rate at one time, and reduce furnace opening and pulling crystal time effect

Active Publication Date: 2015-10-07
内蒙古中环领先半导体材料有限公司 +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are problems such as low production efficiency and low product quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0007] The present invention provides a method for preparing an 8-inch magnetic field Czochralski single crystal, which comprises the following steps in sequence: loading material, heating the chemical material, opening the electromagnetic field, stabilizing the temperature, drawing a thinner diameter, releasing the shoulder, retracting the shoulder, and growing with equal diameters , finishing, lifting to cool down and out of the oven. After the temperature is stabilized, the liquid surface temperature of the melted raw material is 1450°C, and the SP value is set to 1300; from the beginning of drawing the thin diameter to the end of the shoulder setting, the SP value is reduced by 100 units; adopt the method of high pulling speed and slow shoulder setting, The pulling speed used when drawing the thin diameter is 400mm / min, and the thin diameter is drawn by the pulling method, the length of the thin diameter is 300mm, and the diameter of the thin diameter is 3-5mm; when the sh...

Embodiment 2

[0010] The present invention provides a method for preparing an 8-inch magnetic field Czochralski single crystal, which comprises the following steps in sequence: loading material, heating the chemical material, opening the electromagnetic field, stabilizing the temperature, drawing a thinner diameter, releasing the shoulder, retracting the shoulder, and growing with equal diameters , finishing, lifting to cool down and out of the oven. After stabilizing the temperature, make the liquid surface temperature of the melted raw materials 1450°C, reduce the SP value by 80 units from the beginning of drawing the thin diameter to the end of the shoulder release, adopt the method of high drawing speed and slow shoulder release, and use the drawing method used when drawing the thin diameter. The speed is 370mm / min, and the thin diameter is drawn by the pulling method, the length of the thin diameter is 230mm, and the diameter of the thin diameter is 3-5mm; when the shoulder is put, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of an 8-cun (110) magnetic field Czochralski crystal. The preparation method comprises the following steps in sequence: charging, heating to melt the material, opening an electromagnetic field, stabilizing the temperature, introducing fine diameter, shouldering, shrinking the shoulder, growing with a constant diameter, ending, lifting to cool, and discharging; after the temperature is stabilized, the liquid level of the molten raw material is at the temperature of 1450 DEG C, the SP value is set to be 1300; the SP value is reduced by 80 to 120 units from the step of starting to introduce the fine diameter to the step of finishing the shouldering; the Czochralski speed adopted in the step of introducing the fine diameter is 350 to 450mm / min; introducing the fine diameter is carried out by the point-Czochralski method, and the fine diameter is 200 to 300mm in length and 3 to 5mm in diameter; when in shouldering, the Czochralski speed is controlled to reduce from 350 to 450mm / min to 40 to 60mm / min within 5 minutes, the Czochralski speed is remained the same during shouldering, and a shoulder part is kept at an angle of 30 to 60 degrees. The preparation method has the beneficial effects that the one-time crystalline ratio of the 8-cun (110) Czochralski crystal is increased, the time for blowing in to perform Czochralski to the crystal is reduced, and the cost is saved.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal production, and in particular relates to a preparation method of an 8-inch <110> magnetic field Czochralski single crystal. Background technique [0002] The traditional process of pulling 8-inch <110> single crystal has a low crystal formation rate of only 20%-30%, and the crystal pulling time of each furnace is relatively long, averaging 60-80h. There are problems such as low production efficiency and low product quality. Contents of the invention [0003] The problem to be solved by the present invention is to provide a method for preparing an 8-inch <110> magnetic field Czochralski single crystal, which is especially suitable for pulling an 8-inch <110> single crystal in a magnetic field environment. [0004] In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is: a preparation method of an ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 宋都明王林田志民王清泉张颂越
Owner 内蒙古中环领先半导体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com