Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Critical Dimension Scanning Electron Microscope and Its Vacuum Tube

An electron microscope and key dimension technology, applied in discharge tubes, circuits, electrical components, etc., can solve the problems of broken positioning grooves, low hardness, and scrapping of the wafers to be tested, so as to reduce production costs and increase shipments. Quality, simple structure

Active Publication Date: 2015-09-09
CSMC TECH FAB2 CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, wafers are usually made of silicon, germanium, or semiconductor materials containing silicon and / or germanium, which have physical characteristics such as low hardness and high brittleness. When pin contact is used to locate the wafer to be tested, the positioning groove of the wafer to be tested will usually be damaged to varying degrees, and in severe cases, the wafer to be tested will be scrapped, and the above situation will have a serious impact on the shipment quality of the batch of wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Critical Dimension Scanning Electron Microscope and Its Vacuum Tube

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0020] In order to provide a thorough understanding of the present invention, the detailed structure will be set forth in the following description. It is evident that the practice of the invention is not limited to specific details familiar to those skilled in the art. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0021] The invention provides a critical dimension scanning electron microscope. The stage of the critical dimension sc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vacuum casing for a CD-SEM. The vacuum casing is in a ring structure, the inner diameter of the vacuum casing is matched with a pin arranged on a stage of the CD-SEM, and the hardness of the vacuum casing is smaller than that of a wafer to be tested. A notch at the edge of the wafer to the tested can be protected from being damaged through installing the vacuum casing on the notch pin of the CD-SEM, therefore the delivery quality of the wafer is improved, and the production cost is reduced. Additionally, the vacuum casing has the advantages of being simple in structure, convenient to install, easy to process and the like.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a vacuum sleeve for a critical dimension scanning electron microscope and a critical dimension scanning electron microscope using the vacuum sleeve. Background technique [0002] In recent years, as the critical dimensions of semiconductor devices continue to shrink, Critical Dimension Scanning Electron Microscopy (CD-SEM) is widely used in the field of semiconductor device manufacturing to measure critical dimensions online. [0003] When using a critical dimension scanning electron microscope to measure the critical dimension of a semiconductor device, it is first necessary to transfer the wafer to be measured to a predetermined position on the stage and fix it at the predetermined position. At present, a critical dimension scanning electron microscope usually uses a mechanical device to perform positioning operations on the wafer to be tested. Taking HITACHI's critical dimension...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/20H01J37/28
Inventor 刘伟王迪
Owner CSMC TECH FAB2 CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com