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Heat treatment process of semiconductor silicon wafer

A semiconductor and heat treatment furnace technology, applied in the direction of post-processing, post-processing details, crystal growth, etc., can solve problems such as abnormal quality and device parameter deviation, improve warpage and curvature, release mechanical stress, and inhibit thermal donors effect of effect

Active Publication Date: 2015-06-24
ZHEJIANG COWIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there are silicon wafers with incomplete heat treatment or no heat treatment in a certain resistivity gear, the device parameters obtained during device fabrication will completely deviate from the original settings, resulting in serious quality abnormalities

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Semiconductor silicon wafer heat treatment process of the present invention specifically comprises the following steps:

[0023] (1) Stabilize the temperature in the heat treatment furnace at 640°C to 660°C;

[0024] (2) Introduce high-purity argon into the heat treatment furnace and stabilize the temperature in the heat treatment furnace at 640°C to 660°C;

[0025] (3) Put the semiconductor wafer neatly and horizontally into the quartz boat;

[0026] (4) Turn on the heat treatment furnace, and quickly push the quartz boat carrying the semiconductor silicon wafer into the constant temperature zone of the heat treatment furnace at 640°C to 660°C for 30-45 minutes;

[0027] (5) Open the heat treatment furnace, and quickly pull the quartz boat carrying the semiconductor silicon wafer out of the heat treatment furnace;

[0028] (6) Quickly place the quartz boat together with the semiconductor silicon wafer on the air cooling device and quickly air cool it to room temperat...

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Abstract

The invention discloses a heat treatment process of a semiconductor silicon wafer. The process comprises the steps of: (1) stabilizing the temperature in heat treatment furnace and stabilizing the temperature in the heat treatment furnace at 640-660 DEG C; (3) placing the semiconductor silicon wafer into a quartz boat orderly and horizontally; (4) opening the heat treatment furnace and pushing the quartz boat which carries the semiconductor silicon wafer quickly into a constant temperature area at 640-660 DEG C of the heat treatment furnace to be processed for 30-45minutes; (5) opening the heat treatment furnace and pulling the quartz boat which carries the semiconductor silicon wafer quickly out of the heat treatment furnace; and (6) quickly placing the quartz boat and the semiconductor silicon wafer at an air cooler to be quickly cooled to room temperature. According to the heat treatment process of the semiconductor silicon wafer provided by the invention, the oxygen donor effect is eliminated and the heat donor effect is inhibited through heat treatment at 650 DEG C and rapid annealing crossing at 350-500 DEG C, meanwhile, no novel donor effect is generated within a short time for treatment at 650 DEG C, so that the real resistivity of the straightly pulled monocrystalline silicon piece can be obtained by the heat treatment process disclosed by the invention.

Description

technical field [0001] The invention belongs to the field of semiconductor silicon wafer manufacturing and processing, and in particular relates to a heat treatment process suitable for Czochralski monocrystalline silicon wafers of semiconductor integrated circuits and device substrates. Background technique [0002] Czochralski silicon single crystal is to place polysilicon in a high-purity quartz crucible and melt it at high temperature, because the high-purity crucible is in direct contact with molten silicon and is at a high temperature above 1450°C. At high temperature, SiO2 will react with molten silicon to grow SiO and partially dissolve in In molten silicon, as the crystal grows into the interior of the crystal, oxygen in silicon is formed. [0003] At the same time, the growth of direct silicon single crystal is slowly solidified and grown from a high-temperature melt, and the driving force of crystal growth mainly comes from the supercooling degree formed by the te...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02
Inventor 孙新利
Owner ZHEJIANG COWIN ELECTRONICS
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