Thermo-electric pile infrared detector compatible with complementary metal oxide semiconductor technology

Abstract

The invention relates to a thermo-electric pile infrared detector compatible with a complementary metal oxide semiconductor technology, which belongs to the technical field of the infrared detectors. According to the technical scheme provided by the invention, the thermo-electric pile infrared detector compatible with the complementary metal oxide semiconductor technology comprises a bearing substrate; an isolation supporting layer is arranged on the bearing substrate; symmetrically distributed thermo-electric piles are arranged at two sides corresponding to an isolation groove above the isolation supporting layer; the thermo-electric piles are isolated through the isolation groove; the thermo-electric piles at the two sides of the isolation groove are electrically connected into a whole body and covered by fourth dielectric layers; infrared absorption layers are arranged on the fourth dielectric layers and are supported on the fourth dielectric layers through heat conduction support pillars; and a heat insulation cavity is formed between the infrared absorption layers and the thermo-electric piles through the heat conduction support pillars and is communicated with the isolation groove. The thermo-electric pile infrared detector is simple and compact in structure, small in volume and simple in a manufacturing technology and has high duty factors and good adaptability.

Description

technical field [0001] The invention relates to an infrared detector, in particular to a thermopile infrared detector compatible with complementary metal oxide semiconductor technology, and belongs to the technical field of infrared detectors. Background technique [0002] Herschel discovered infrared radiation in the early 19th century. With the progress of the times, infrared technology has played an increasingly important role in military fields such as infrared guidance, infrared imaging, and early warning, as well as in civilian fields such as infrared alarm, infrared temperature measurement, and detection. , thus also promoting the development of infrared detectors as the heart of infrared devices. [0003] Infrared detection technology is mainly divided into refrigerated and non-refrigerated. Refrigerated infrared detectors are also called photon infrared detectors. Although they have better detection performance, they must use special and expensive cooling equipment....

AI Technical Summary

Problems solved by technology

The traditional thermopile infrared detector structure mainly has the following disadvantages: 1. The size is too large: in order to improve the responsivity, the length of the thermocouple pair connecting the infrared absorption area and the silicon substrate is lengthened, resulting in an increase in the device area and making it arrayed. It must be difficult; 2. The space factor is low: In order to increase the temperature difference between the hot and cold ends, some absorbing surfaces must be etched away to make an insulating structure, so the ratio of the sensor absorbing area to the sensor area is not high; 3. The number of thermocouple pairs is large , the production process is complex

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