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Gallium nitride based light emitting diode with current expanding structure

A technology of light-emitting diodes and current expansion, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high voltage of LED chips, achieve the effects of not being easy to tilt and warping, reducing electrode shading, and retaining the effect of current expansion

Active Publication Date: 2015-02-25
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This invention proposes to use transparent electrodes as current extension strips. Although it can improve the effect of current dispersion, reduce electrode shading, and increase light brightness, it is easy to cause high voltage (Vf) of LED chips. Therefore, Au metal or Au is still mainly used in the industry. Alloys as Materials for Current Diffusion

Method used

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  • Gallium nitride based light emitting diode with current expanding structure
  • Gallium nitride based light emitting diode with current expanding structure

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Embodiment

[0029] Such as figure 1 and 2 As shown, the GaN-based light-emitting diode with a current spreading structure includes a sapphire substrate 100 as the bottom layer; a light-emitting epitaxial layer 101 located on the substrate 100, and the light-emitting epitaxial layer consists of N-GaN layer 107, The light emitting layer 108 and the P-GaN layer 109 are composed; the ITO transparent conductive layer 102 located on the light emitting epitaxial layer 101; the current spreading structure located on the transparent conductive layer 102, and the current spreading structure includes the ITO transparent electrode extension bar 103 and the Au metal electrode extension bar 104 whose side wall is close to the side wall of the transparent electrode extension bar 103 ; the P electrode 105 on the ITO transparent conductive layer 102 and the N electrode 106 on the N-GaN layer 107 .

[0030] The ITO transparent electrode extension strip 103 can be made by reactive magnetron sputtering and ...

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Abstract

A gallium nitride-based light-emitting diode with a current expanding structure. An LED structure comprises a substrate (100), a light-emitting epitaxial layer (101) located on the substrate, and a current expanding structure located on the light-emitting epitaxial layer, wherein the current expanding structure comprises a transparent electrode expanding strip (103) and a metal electrode expanding strip (104) attached to the side wall of the transparent electrode expanding strip (103). By means of the current expanding structure, not only the current expanding effect can be improved, electrode shading reduced, and the light-emitting efficiency improved, but also a high voltage (Vf) can be avoided.

Description

technical field [0001] The present invention relates to light emitting diodes, more particularly gallium nitride based light emitting diodes with a current spreading structure. Background technique [0002] LED light-emitting diode is a solid-state semiconductor device that can directly convert electricity into light. LED has the advantages of no pollution, high brightness, low power consumption, long life, low working voltage, and easy miniaturization, and is regarded as the rising star of "green lighting source". In order to improve the light-emitting efficiency of LED light-emitting diodes, people have thought of many ways. For example, there are many LEDs with higher brightness ITO chips in the current market. In GaN-based white LEDs, if ITO is used instead of Ni / Au as the P-type electrode chip, the brightness of the chip is 20% to 30% higher than that of chips using general electrodes. Among many materials that can be used as transparent electrodes (TCL), such as: ind...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38
CPCH01L33/20H01L33/42H01L33/38H01L2933/0016H01L33/007H01L33/0075H01L33/08H01L33/32H01L33/387H01L33/62H01L2933/0066
Inventor 尹灵峰林素慧郑建森刘传桂欧毅德陈功
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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