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Optoelectronic device and method for manufacturing an optoelectronic device

一种光电子器件、发光材料的技术,应用在发光装置,制造光电子器件领域,能够解决颗粒密度的梯度耗费、难以复现、昂贵等问题,达到高光学效率、均匀光密度的效果

Active Publication Date: 2016-01-20
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the adjustment of the gradient of the particle density is extremely complex, difficult to reproduce and expensive in production

Method used

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  • Optoelectronic device and method for manufacturing an optoelectronic device
  • Optoelectronic device and method for manufacturing an optoelectronic device
  • Optoelectronic device and method for manufacturing an optoelectronic device

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Embodiment Construction

[0054] Elements that are the same, of the same kind or have the same function are provided with the same reference signs in the drawings. The drawings and the size ratios of the elements shown in the drawings to each other cannot be shown to be to scale. On the contrary, for better description and for better understanding, various elements can be shown exaggerated.

[0055] figure 1 The optoelectronic device 1 is shown. The semiconductor chip 3 is applied on the carrier 2. The electrical contact is achieved via the contact 4 and the bonding wire 5. The semiconductor chip 3 emits primary radiation 6. The semiconductor chip 3 is at least partially surrounded by an at least partially transparent medium 7 having a height 8 above the carrier 2 and a width 9 (aspect ratio) along the carrier 2. The particles 10, 11 that interact with the primary radiation 6 are introduced into the medium 7. Medium 7 has an aspect ratio greater than one. The particles 10, 11 are uniformly distribut...

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PUM

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Abstract

An optoelectronic component (1) has a carrier (2) and at least one semiconductor chip (3). The semiconductor chip ( 3 ) is arranged on the carrier ( 2 ) and is designed to emit primary radiation ( 6 ). The semiconductor chip (3) at least partially surrounds an at least partially transparent medium (7), which has a height (8) above the carrier (2) and a width (9) along the carrier (2). Particles ( 10 , 11 ) are introduced into the medium ( 7 ), said particles interacting with the primary radiation ( 6 ). The ratio of height (8) to width (9) of the medium (7) is greater than one.

Description

Technical field [0001] The invention relates to an optoelectronic device having a semiconductor chip for emitting electromagnetic radiation, and a light emitting device having at least one such optoelectronic device. In addition, a method for manufacturing optoelectronic devices is proposed. Background technique [0002] Known from the prior art are optoelectronic devices and light-emitting devices having the optoelectronic devices. Therefore, the document WO2009 / 135620A1 discloses a light emitting device with a light emitting mechanism that emits electromagnetic radiation. An extension of the lighting mechanism can be an optoelectronic device. The electromagnetic radiation is partially deflected by the interaction with the particles, and the electromagnetic radiation is partially changed in relation to its wavelength. The deflection of electromagnetic radiation can be achieved by the gradient of particle density. However, the adjustment of the particle density gradient is ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/50H01L33/56H01L33/54G02B6/00H01L33/60
CPCG02B6/0073H01L33/501H01L33/56H01L33/60H01L2933/0091H01L2224/48091H01L2224/8592H01L33/505G02B6/0023H01L33/502H01L2924/00014H01L33/62
Inventor 斯特凡·伊莱克亚历山大·林科夫马蒂亚斯·扎巴蒂尔
Owner OSRAM OPTO SEMICON GMBH & CO OHG
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