Groove type field oxide power MOS (metal oxide semiconductor) device with ultra low conduction resistance

Abstract

The invention discloses a groove type field oxide power MOS (metal oxide semiconductor) device with ultra low conduction resistance, relating to a semiconductor power device. The groove type field oxide power MOS device comprises a P-type silicon layer on a substrate, an active top silicon layer and groove type field oxide, wherein the active top silicon layer comprises a vertical channel, an N- drifting zone, a P-type silicon zone and a N+ drain zone buried in the surface of the whole substrate. Since the N+ drain zone is buried in the surface of the whole substrate based on the conventional groove type field oxide device, a current carrier can move directly through the N- drifting zone between the drain zone N+ and a source zone N+ when the device is in an ON state. Compared with the conventional groove type field oxide structure, the drifting distance of the current carrier can be reduced greatly, so that the conduction resistance of the device in the ON state can be reduced effectively. The structure is also suitable for power devices based on the SOI (silicon-on-insulator) technology.

Description

technical field [0001] The invention relates to a semiconductor power device, in particular to a slot-type field oxygen power MOS device with extremely low conduction resistance. Background technique [0002] Power MOS (Metal-Oxide-Semiconductor) devices are widely used in the field of power integration, and the contradiction between breakdown voltage and on-resistance has been one of the focal issues that people have been paying attention to for a long time. There are many solutions to alleviate this contradiction, among which the slot-type field oxygen structure is considered to be one of the structures that can effectively alleviate this contradiction. A typical conventional trough field oxygen structure such as figure 1 As shown, 1 is the substrate silicon layer, 2 is the P well, 3 is the P+ source region, 4 is the N+ source region, 5 is the N+ drain region, 6 is the drain electrode, 7 is the gate electrode, 8 is the source electrode, and 9 is the N-drift region, 10 is...

AI Technical Summary

Problems solved by technology

[0004] In view of this, in order to further reduce the on-resistance of power MOS and alleviate the problem between device breakdown voltage and on-resistance, the present invention proposes a slot-type field oxygen power MOS device with extremely low on-resistance, which is more conventional The slot oxygen structure greatly reduces the drift distance of carriers, thereby effectively reducing the on-resistance of the device in the on state

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