Reverse side engineered III-nitride devices

Abstract

Group III-nitride devices are described that include a stack of III-nitride layers, passivation layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a barrier layer and a spacer layer. One passivation layer directly contacts a surface of the spacer layer on a side opposite to the channel layer and is an electrical insulator. The stack of III-nitride layers and the first passivation layer form a structure with a reverse side proximate to the first passivation layer and an obverse side proximate to the barrier layer. Another passivation layer is on the obverse side of the structure. Defected nucleation and stress management layers that form a buffer layer during the formation process can be partially or entirely removed.

Description

technical field [0001] The present invention relates to a semiconductor device fabricated on a group III nitride semiconductor. Background technique [0002] For high-power electronic device applications, III-nitride-based devices have many potential material advantages over silicon-based devices. Among others, these include larger bandgap and breakdown fields, high electron mobility in two-dimensional electron gas (2DEG), low thermal generation current and the possibility to use direct bandgap, plus in many Various energy band and polarization design techniques can be applied in these structures for novel device functions. However, applications are hampered by the lack of low-cost substrates for device fabrication. [0003] Devices are sometimes formed by heteroepitaxy on suitable substrates such as silicon carbide, sapphire, or silicon. Techniques for applying the layers can include molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) and hydr...

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Problems solved by technology

While this method produces acceptable spacers, channel and barrier layers, it is difficult to achieve high quality buffer layers

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