Three-dimensional simulation method for chemical vapor deposition process

Abstract

The invention relates to a three-dimensional simulation method for a chemical vapor deposition process, belonging to the field of deposition process simulation in micro-electronic processing. The method comprises the steps of: representing material distribution of each position in a simulation region omega by using a cell method (CM) and subdividing the deposition graph surface into a plurality of triangular planes; realizing a transport process of quickly tracking deposition particles by using a Monte Carlo (MC) method in combination with a spatial oct-tree non-uniform subdivision technology, calculating to obtain the triangular planes of the deposition graph surface, and calculating in combination with a deposition model corresponding to current position material and the area of the triangular plane and the like to obtain the deposition velocity of each triangular plane of the deposition graph surface, wherein the blindness of the calculation of the deposition velocity is avoided; and according to the calculation result, obtaining the deposition velocity, and realizing accurate tracking of the deposition surface motion in the chemical vapor deposition (CVD) process by using a level set (LS) method. According to the method, various vapor deposition processes such as low-pressure chemical vapor deposition, plasma enhancement chemical vapor deposition, chemical vapor deposition under atmospheric pressure and the like can be simulated, and deposition simulation of complicated deposition graph composed of a plurality of materials is realized.

Description

technical field [0001] The invention belongs to the field of deposition process simulation in microelectronic processing, and provides a method of expressing the Ω material distribution in the simulation area by using the cell method (CM), using the Monte Carlo method (MC) to realize the transport of deposited particles, and using the level set method (LS) Simulation method for chemical vapor deposition (CVD) processes to achieve surface motion. Background technique [0002] At present, integrated circuits have been applied to various fields, and its industry has become a basic part of future economic development, and global competition is becoming increasingly fierce. These undoubtedly bring new challenges to the development of large-scale integrated circuits. With the continuous shrinking of the feature size of integrated circuits and the continuous increase of semiconductor wafers, the cornerstone of its production, the integration of integrated circuits is getting highe...

AI Technical Summary

Problems solved by technology

The invention can simulate various vapor deposition processes such as low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, etc., realizes the deposition simulation of deposition patterns composed of complex and various materials, and solves the problem of single constituent materials in previous simulations , inaccurate simulation, etc.

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