Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Scan Test Method

A scanning test and memory technology, applied in the direction of digital circuit testing, electronic circuit testing, etc., can solve the problems of increasing the scanning test cost and high memory, and achieve the effect of reducing the scanning test cost, low storage depth and cost.

Active Publication Date: 2016-06-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This has high memory requirements, which increases the cost of scan testing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Scan Test Method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0022] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described herein, so the present invention is not limited by the specific embodiments disclosed below.

[0023] In the prior art, the price of a memory testing machine is relatively low. However, the test pattern used when testing the memory is a regularly changing test pattern, and there are at least two larger DRAM memories used to store codes or to collect failure information of the tested memory, which is similar to logic integrated circuit testing. The patterns are different (corresponding to tens of millions ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A scanning test method comprises the following steps: successively writing a scanning test graph corresponding to key nodes in a first memory according to an sequence of the key nodes in an integrated circuit (IC), wherein the sequence of a first memory storage address is matched with the sequence of the key nodes, and the scanning test graph comprises: an input graphs corresponding to the key nodes and a standard output result corresponding to the input graphs; inputting the input graphs successively into the IC according to the sequence of the first memory storage address and performing scanning test; acquiring an output result corresponding to the input graphs, comparing the output result with a standard output result and successively writing a comparison result in a second memory according to the sequence of the key nodes, wherein the sequence of a second memory storage address is matched with the sequence of key nodes; based on the comparison result in the second memory, knowing whether the key nodes corresponding to the second memory storage address in the IC are in a normal working state. By using the method of the invention, scanning test costs can be reduced.

Description

Technical field [0001] The invention relates to the field of integrated circuit testing, in particular to a scanning testing method of integrated circuits. Background technique [0002] With the development of electronic products in the direction of miniaturization, large-scale integrated circuits (Integrated Circuits, such as laptops, CPU circuits, micro mobile communication circuits (mobile phones, etc.), digital audio and video circuits, communication complete machines, digital cameras, etc.) IC) and very large scale integration (Very Large Scale Integration, VLSI) require semiconductor chips to be made smaller and thinner. [0003] In the integrated circuit manufacturing process, the formed integrated circuit needs to be tested to ensure that it can basically meet the features or design specifications of the device. Specifically, the test usually includes verification of voltage, current, timing, and function. If the test result does not meet the specification, the integrated ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/317
Inventor 索鑫
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com