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High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate

A technology of aluminum nitride ceramics and aluminum nitride substrates, which is applied in the direction of electrical components, circuits, waveguide devices, etc., and can solve problems such as deviation of impedance and attenuation accuracy, poor resistance to high and low temperature impact, and attenuation accuracy that cannot meet the requirements. , to improve the design, increase the impact resistance of high and low temperature, and avoid the effect of resistance quenching

Inactive Publication Date: 2012-02-22
苏州市新诚氏通讯电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above problems are mainly due to the design of the domestic 100W-10dB attenuator, and the poor performance of high and low temperature impact resistance
After completing the high and low temperature impact test, the impedance and attenuation accuracy deviated from the actual required range, so that the attenuation accuracy could not meet the requirements

Method used

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  • High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate
  • High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate
  • High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate

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Embodiment Construction

[0017] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] Such as figure 1 , 2 As shown, the high-power aluminum nitride ceramic substrate 100W-10dB attenuator includes an aluminum nitride substrate 1, and a conductive layer 5 is printed on the back of the aluminum nitride substrate 1, and the conductive layer is printed by printing silver paste. The front side of the aluminum nitride substrate 1 is printed with resistors R1, R2, R3, R4, R5 and silver paste wire 2, and the silver paste wire 2 connects the resistors R1, R2, R3, R4, R5 to form a TT-shaped attenuation circuit A protective glass film 3 is printed on the resistors R1, R2, R3, R4, and R5, and the protective glass film 3 is used to protect the resistors R1, R2, R3, R4, and R5. Also be printed with one deck black protective film 4 on the upper surface of whole circuit namely silver paste conductor 2 and glass protective film 3, bla...

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Abstract

The invention discloses a high-power attenuator (100W-10dB) using an aluminum nitride ceramic substrate. The attenuator comprises the aluminum nitride substrate, wherein, a conductor layer is printed on the rear face of the aluminum nitride substrate; and a plurality of resistors and silver paste leads are printed on the front face of the aluminum nitride substrate and are connected together to form an attenuation circuit, and glass protective films are printed on the resistors. The high-power attenuator (100W-10dB) using the aluminum nitride ceramic substrate has the advantages that the area of the resistors is increased so as to enhance the high-low temperature impact resistance of the attenuator and meet the requirements for performance indexes of the product; and meanwhile quenching damage on the resistors due to high temperature can be avoided during the process of welding the leads on an output end, the risk that the damaged resistors are broken can be prevented during the actual application process, and the circuit design is improved so that the attenuation precision can reach 10 plus or minus 1dB within the frequency band of 3G and standing wave can meet the market requirement, thus the product can be applied to a 3G (the 3rd generation) network.

Description

technical field [0001] The invention relates to an aluminum nitride ceramic attenuation sheet, in particular to a high-power aluminum nitride ceramic substrate 100W-10dB attenuation sheet. Background technique [0002] At present, most communication base stations use high-power ceramic load chips to absorb the reverse input power of communication components. High-power ceramic load chips can only simply consume and absorb excess power, but cannot monitor the working conditions of the base station in real time. When the base station fails, it cannot be judged in time, and there is no protection for the equipment. [0003] The attenuator can not only absorb the reverse input power of the communication components in the communication base station, but also extract some signals from the communication components, monitor the base station in real time, and protect the equipment. However, the current domestic 100W-20dB aluminum nitride The attenuation accuracy of ceramic attenuato...

Claims

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Application Information

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IPC IPC(8): H01P1/22
Inventor 郝敏
Owner 苏州市新诚氏通讯电子股份有限公司
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