High-power attenuator (100W-10dB) using aluminum nitride ceramic substrate
A technology of aluminum nitride ceramics and aluminum nitride substrates, which is applied in the direction of electrical components, circuits, waveguide devices, etc., and can solve problems such as deviation of impedance and attenuation accuracy, poor resistance to high and low temperature impact, and attenuation accuracy that cannot meet the requirements. , to improve the design, increase the impact resistance of high and low temperature, and avoid the effect of resistance quenching
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[0017] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0018] Such as figure 1 , 2 As shown, the high-power aluminum nitride ceramic substrate 100W-10dB attenuator includes an aluminum nitride substrate 1, and a conductive layer 5 is printed on the back of the aluminum nitride substrate 1, and the conductive layer is printed by printing silver paste. The front side of the aluminum nitride substrate 1 is printed with resistors R1, R2, R3, R4, R5 and silver paste wire 2, and the silver paste wire 2 connects the resistors R1, R2, R3, R4, R5 to form a TT-shaped attenuation circuit A protective glass film 3 is printed on the resistors R1, R2, R3, R4, and R5, and the protective glass film 3 is used to protect the resistors R1, R2, R3, R4, and R5. Also be printed with one deck black protective film 4 on the upper surface of whole circuit namely silver paste conductor 2 and glass protective film 3, bla...
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