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Polycrystalline furnace using lower chamber heat-insulation structure

A polycrystalline furnace and cavity technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of poor heat preservation effect and low safety factor, so as to improve heat preservation effect, reduce safety hazards, and facilitate growth Effect

Active Publication Date: 2014-04-16
宁夏盈谷实业股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to improve the growth effect of silicon ingots, the lower cavity of the polycrystalline furnace is equipped with an insulation structure. Generally, the insulation structure of the lower cavity of the common polycrystalline furnace adopts a full water-cooled structure, which is likely to cause poor thermal insulation effect and low safety factor.

Method used

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  • Polycrystalline furnace using lower chamber heat-insulation structure

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Embodiment Construction

[0016] Please also see figure 1 , figure 2 , image 3 and Figure 4 , a polycrystalline furnace adopting a lower cavity insulation structure, including a thermal field 1, a thermal insulation blanket 2, a water channel 3 and a lower cavity 4, the lower cavity 4 includes a cylindrical part 41 and a bottom 42, and the cylindrical part 41 is formed by the outer The cylinder 411 and the inner cylinder 412 are formed by two layers of welding, and the first space 413 is formed between the outer cylinder 411 and the inner cylinder 412. The bottom 42 is also formed by welding the inner layer 421 and the outer layer 422, and the inner layer 421 and the outer layer 422 are welded together. The second space 423 is formed between the outer layers 422, the thermal field 1 is installed in the lower cavity 4, the thermal insulation blanket 2 is spread on the inner surface of the inner layer 421 at the bottom 42 of the lower cavity 4, and the water channel 3 is welded to the cylinder of th...

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Abstract

The invention provides a lower chamber heat-insulation structure and a polycrystalline furnace using the same. The polycrystalline furnace comprises a thermal field, a heat-insulation blanket, a waterway and a lower chamber, wherein the lower chamber comprises a cylinder part and a bottom part; the cylinder part is formed by welding an inner cylinder and an outer cylinder; a first space is formed between the inner cylinder and the outer cylinder; the bottom part is formed by welding an inner layer and an outer layer; a second space is formed between the inner layer and the outer layer; the waterway is welded in the first space of the cylinder part of the lower chamber; the outer layer of the bottom part of the lower chamber is provided with an air inlet, an air outlet and a temperature measurement; the air inlet is communicated with the second space; and the air outlet is communicated with the second space. The lower chamber heat-insulation structure provided by the invention has the beneficial effects that: the heat insulation effect is good, the silicon ingot growth is facilitated and the security risks are reduced in operating process.

Description

Technical field: [0001] The invention relates to the technical field of monocrystalline silicon production equipment, in particular to a lower chamber heat preservation structure and a polycrystalline furnace adopting the lower chamber heat preservation structure. Background technique: [0002] Polysilicon ingot furnace is the necessary equipment in the process of converting polysilicon material into polysilicon ingot, and polysilicon ingot is the basic raw material in photovoltaic power generation and semiconductor industry after processing. As the key supporting material of modern information society, polycrystalline silicon ingot is one of the most important polycrystalline materials in the world. It is not only the main functional material for the development of computers and integrated circuits, but also the main functional material for photovoltaic power generation and utilization of solar energy. During production, polysilicon that has reached a certain purity require...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 吴学军周凯平
Owner 宁夏盈谷实业股份有限公司
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