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Vertical light emitting diode and manufacturing method of the same

A technology of light-emitting diodes and electrodes, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increased manufacturing time, increased manufacturing costs, and low output

Active Publication Date: 2011-07-06
LG DISPLAY CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, since the laser lift-off process uses expensive equipment, it increases the manufacturing cost and also complicates the entire manufacturing process compared to conventional LEDs, resulting in increased manufacturing time
Also, the laser lift-off process may cause damage to the nitride semiconductor layers 23 to 26
In addition, the attachment process between the lower metal substrate 21 and the p-type electrode 22 often suffers from process errors and becomes a factor of low yield

Method used

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  • Vertical light emitting diode and manufacturing method of the same
  • Vertical light emitting diode and manufacturing method of the same
  • Vertical light emitting diode and manufacturing method of the same

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Embodiment Construction

[0036] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0037] Hereinafter, a vertical light emitting diode according to an embodiment of the present invention and a method of manufacturing the same will be described in detail with reference to the accompanying drawings.

[0038] image 3 is a perspective view showing a vertical light emitting diode according to an embodiment of the present invention, and Figure 4 is along image 3 The cross-sectional view of the line A-A'.

[0039] Such as image 3 with 4 As shown in , the vertical light emitting diode 100 according to an embodiment of the present invention includes a substrate 110 having a plurality of through holes 111 vertically penetrating through it, a first buffer layer 120 formed on the subs...

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Abstract

The present invention relates to a vertical light emitting diode and a manufacturing method of the same. The vertical light emitting diode includes a substrate having a plurality of penetrating via-holes, a plurality of nitride semiconductor layers formed on the substrate, a first electrode formed on the plurality of nitride semiconductor layers, and a second electrode formed to fill the plurality of via-holes thereby contacting part of the plurality of nitride semiconductor layers.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2009-0134353 filed December 30, 2009, which is incorporated by reference as if fully set forth herein. technical field [0002] The invention relates to a vertical light emitting diode and a manufacturing method thereof. Background technique [0003] In general, a light emitting diode (LED) is a special type of light emitting device that emits light when an electric current is applied to it. Such light-emitting diodes, which convert electricity into light using the properties of compound semiconductors, can operate at low voltages with high efficiency, and thus have consistently demonstrated outstanding energy-saving effects. Recently, light-emitting diodes have been significantly improved in brightness and have been applied to various automation equipment such as backlight units of liquid crystal display equipment, electronic bulletin boards, display equipment, home appliances, and the like. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/42H01L33/12H01L33/00
CPCH01L33/405H01L33/387H01L2933/0016H01L33/42
Inventor 李雄张昭英郑相俊金贤龟
Owner LG DISPLAY CO LTD
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