Method for modifying photoresisting materials by photosensitive nano-silica

A nano-silicon dioxide, photoresist material technology, applied in chemical instruments and methods, opto-mechanical equipment, optics, etc., can solve the problem of insignificant reduction of exposure energy, and improve the sensitivity of ultraviolet light energy and thermal expansion stability. the effect of improving dispersibility

Active Publication Date: 2012-05-23
JIANGSU KUANGSHUN PHOTOSENSITIVITY NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

"Microelectronic Engineering" (2008, 85, 1624-1628) introduces that hexahedral oligosilsesquioxane (POSS) containing a double bond will be added to the alkali-soluble photosensitive prepolymer, and the carbonyl and The hydrogen bond interaction between the hydroxyl groups in the prepolymer improves the photosensitive sensitivity of the photoresist material, but because the POSS powder is easy to agglomerate in the polymer, the reduction in exposure energy is not significant

Method used

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  • Method for modifying photoresisting materials by photosensitive nano-silica
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  • Method for modifying photoresisting materials by photosensitive nano-silica

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This example is a comparative example of not using photosensitive nano silicon dioxide to modify the photoresist material.

[0040] Dissolve 0.3g of the photoinitiating system (907 / ITX), 0.005g of the inhibitor hydroquinone in 1.095g of the active diluent tripropylene glycol diacrylate, add 8g of photosensitive alkali-soluble pure acrylate prepolymer, Add 0.1g of phthalocyanine blue, stir well, and screen-print it on the copper-clad board, pre-bake it at 75°C for 30min, expose it to a 500W ultraviolet lamp (exposure time 30s), and place it at 33°C±2°C with a mass concentration of 1%. NaCO 3 Develop in the solution (developing time 1min) to obtain a photoresist material that has not been modified by photosensitive nano silicon dioxide.

[0041] Such as figure 1 As shown, the resolution of the circuit pattern made of the photoresist material not modified by photosensitive nano-silica in Example 1 can reach 25 μm.

Embodiment 2

[0043] (1) Preparation of photosensitive nano-silica ester solution:

[0044]Add ethanol, distilled water and ammonia water into a three-necked flask at a molar ratio of 15:8:0.1:1 to ethyl orthosilicate, stir at 45°C and add 14.03 g of ethyl orthosilicate dropwise, and react at a constant temperature for 23 hours to obtain nanometer two Silica sol I. Add KH570 dropwise in 100g of nano-silica sol (molar ratio of KH570: tetraethyl orthosilicate = 4: 1), and react at 50°C for 3.5h to obtain photosensitive nano-silica sol II-M70SiO 2 . M70SiO 2 Mix with propylene glycol methyl ether acetate (the molar ratio of propylene glycol methyl ether acetate: ethanol = 1: 1), vacuum rotary evaporation at 30°C, remove ethanol and ammonia, and obtain photosensitive nano-silica M70SiO 2 Propylene glycol methyl ether acetate solution (60% solids content).

[0045] (2) Modification and preparation of photoresist materials:

[0046] Dissolve 0.3g of the photoinitiating system (907 / ITX), 0.00...

Embodiment 3

[0049] (1) Preparation of photosensitive nano-silica ester solution:

[0050] Add ethanol, distilled water and ammonia water to a three-necked flask at a molar ratio of 20:12:0.2:1 to propyl orthosilicate, stir at 50°C and add 13.74 g of propyl orthosilicate dropwise, and react at a constant temperature for 24 hours to obtain nanometer two Silica sol I. Add KH570 (KH570: propyl orthosilicate molar ratio = 5.5: 1) dropwise in 100g of nano-silica sol, and react at 45°C for 4h to obtain photosensitive nano-silica sol II-M70SiO 2 . M70SiO 2 Mix with dimethyl mixed diacid (dimethyl mixed diacid: ethanol molar ratio = 1.1: 1), vacuum rotary evaporation at 27°C, remove ethanol and ammonia, and obtain photosensitive nano-silica M70SiO 2 Dimethyl mixed diacid solution (60% solids content).

[0051] (2) Modification and preparation of photoresist materials:

[0052] Dissolve 0.50g of the photoinitiator system (BCIM / EMK / NPG), 0.015g of the inhibitor p-hydroxyanisole in 1.485g of the...

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Abstract

The invention provides a method for modifying photoresisting materials by photosensitive nano-silica, belonging to the technical field of high polymer photoresisting materials. In the method, a sol-gel method is adopted to prepare nano-silica sol, then a silane coupling agent containing double bonds is used as a main raw material to carry out in-situ grafting modification on the surface of the nano-silica sol to obtain photosensitive nano-silica, the photosensitive nano-silica is added to the ultraviolet curing alkali soluble prepolymers and the photoresisting materials modified by the photosensitive nano-silica are obtained through interaction between the double bonds on the surface of the photosensitive nano-silica and the double bonds in the ultraviolet curing alkali soluble prepolymers. After modifying the photoresisting materials, the photosensitive performance and dimensional stability to heating of the photoresisting materials can be obviously improved. The photoresisting materials modified by the method can be applied to the fields such as etching resistance of printed circuit boards, imaging ink, color filters of liquid crystal displays and the like.

Description

technical field [0001] The invention relates to the technical field of polymer photoresist materials, in particular to a method for modifying photoresist materials by using photosensitive nano-silicon dioxide. Through the modification, the photosensitivity of photoresist materials can be improved. degree and thermal stability. Background technique [0002] At present, alkali-soluble photoresist materials have become the most popular materials in the printed circuit board market due to their combination of many advantages of traditional UV curing technology and dilute alkali solution development and film removal technology, such as fast curing speed, environmental protection and energy saving, and clean production. The most widely used type of product. Since the alkali-soluble photosensitive organic polymer is used as all the components of the photoresist material, it is vulnerable to low photosensitivity, large thermal expansion coefficient of organic matter, etc. during th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/027C01B33/146
Inventor 刘晓亚陈宁疏亿万安丰磊冯玉进张胜文刘仁吴育云
Owner JIANGSU KUANGSHUN PHOTOSENSITIVITY NEW MATERIAL
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