Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm

A technology of nano-membrane and exothermic reaction, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as circuit failures

Inactive Publication Date: 2011-04-13
SIEMENS AG
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Studies have shown that at 180°C, the first failure of the circuit integrated in the plastic housing is already caused within 250 hours
Conventional metallic-glass electrical feedthroughs often pose problems with regard to manufacturability, especially with regard to the planar manufacturing method and thermal adaptation, and when integrated into packages

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm
  • Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm
  • Method for producing a hermetically sealed, electrical feedthrough using exothermic nanofilm

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] figure 1 An embodiment of a device generated according to the invention is shown. Reference numeral 1 designates an electrical connection, which can likewise be referred to as a through-hole contact. The electrical connection is provided with an active nanomembrane 2 , for example comprising aluminum and nickel. The nanomembrane 2 is coated on both sides with a solder layer, for example with AgSn. Reference numeral 3 denotes a substrate. Reference numeral 5 denotes an encapsulation or a housing covering, which comprises ceramic and / or glass, for example. Electronics 7 are fixed within the package 5 . The coated nanofilm 2 is applied to a substrate 3 in a structured manner. The electronic component 7 is in contact with the structured nanofilm 2 . Reference numeral 9 designates such a contact. Reference numeral 11 denotes a laser beam for initiating an exothermic reaction of the reactive nanofilm 2 . figure 1 Also shown is an electrical via 13 , which runs from th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method for generating at least one electrical connection (1) from at least one electronic component (7), which is positioned on a substrate (3) inside an encapsulation (5), to outside the encapsulation (5). The functional capability of the electrical connection (1) is to be provided at ambient temperatures greater than 140 DEG C and in the event of large power losses and extreme environmental influences. The invention is characterized in that a reactive nanofilm (2), having targeted reaction, which can be triggered exothermically by laser, is used to produce hermetically sealed electrical connections (1). Using the nanofilm (2), an output of an electrical connection (1) and a contact of the electrical connection (1) to at least one further electrical contact can be provided.

Description

technical field [0001] The invention relates to a method according to the preambles of the independent claims and a device according to the co-dependent independent claims. Background technique [0002] With mechatronics, electronics and sensor systems are increasingly being used at significantly higher ambient temperatures / power losses and at the same time under very harsh operating conditions and environmental influences. In this context, especially in the field of high-temperature electronics, a tight, robust and integrable connection to the environment becomes necessary over a minimum installation space. At temperatures above 150° C., electrical feedthroughs in plastic housings are often only suitable under limited conditions. Studies have shown that at 180° C., the first failure of the circuit integrated in the plastic housing is already caused within 250 hours. Conventional metallic-glass electrical feedthroughs often present problems with regard to manufacturability...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2924/01049H01L2924/09701B23K35/3006H01L2924/0781H01L24/29H01L23/3121H01L2924/01058H01L2924/166B23K35/34H01L21/56H01L23/055H01L2924/01006H01L2924/01079H01L2924/14H01L2924/10253H01L2924/01005H01L2924/01082H01L2924/01013H01L2924/014H01L2924/01023H01L2924/07811H01L2924/16152H01L2924/01029B23K2201/40H01L24/80H01L2924/19043H01L2924/01019H01L24/32B23K35/0233H01L2924/01033B23K1/0006B23K2101/40H01L24/83H01L2224/29083H01L2224/291H01L2224/29124H01L2224/83232H01L2924/00H01L2924/01028
Inventor J·瑙恩多夫H·武尔克施
Owner SIEMENS AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products