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Method for detecting effective heat dissipation of encapsulation structure of semiconductor light-emitting diode (LED)

A technology of light-emitting diodes and packaging structures, which is applied in the testing of machine/structural components, measuring devices, optical instrument testing, etc., to achieve the effect of high speed and simple operation

Inactive Publication Date: 2011-04-06
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no simple and effective measurement method

Method used

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  • Method for detecting effective heat dissipation of encapsulation structure of semiconductor light-emitting diode (LED)
  • Method for detecting effective heat dissipation of encapsulation structure of semiconductor light-emitting diode (LED)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The LED lamp packaged by more than 100 LED chips is the test object, which is called lamp 1. The specific measurement steps are as follows:

[0021] Concrete steps of the present invention are as follows:

[0022] 1. Use a constant current power supply with pulse function and DC output function, connect it to lamp 1, and put the power supply in pulse power supply mode. The pulse power supply function is that the pulse width is 5 microseconds, the pulse period is 1 second, and the pulse current amplitude The DC current value is 0.5 ampere, which is the same as that of the lamp in normal operation, so as to ensure that the junction temperature of the light-emitting diode in the lamp will not change, and at the same time ensure that the light-emitting spectrum of the light-emitting diode under pulse driving is consistent with the spectral characteristics under normal working conditions. Connect the incident slit of a small visible light spectrometer with a spectral resolut...

Embodiment 2

[0028] An LED lamp packaged with more than 300 LED chips identical to those used in lamp 1 is the test object, which is called lamp 2. The specific measurement steps are exactly the same as in Example 1, and the final effective heat dissipation coefficient of the package structure of lamp 2 is obtained. The D value is 0.01. With this D value, the quality index of heat dissipation of lamp 2 is smaller than that of lamp 1. Therefore, it can be considered that the package heat dissipation effect of lamp 1 is obviously better than that of lamp 2.

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Abstract

The invention discloses a method for detecting effective heat dissipation of an encapsulation structure of a semiconductor light-emitting diode (LED). The invention provides a new method for acquiring good or bad effective heat dissipation of the encapsulation structure of the semiconductor LED based on the junction temperature and time dependency relationship of the semiconductor LED of a spectrum method. A dynamic curve of temperature and time is acquired by an optical measurement method, and the curve is fitted by indexes to acquire an equivalent heat dissipation coefficient representing the effective heat dissipation of the encapsulation structure. The method can simply and conveniently determine the effective heat dissipation of the encapsulation structure of the semiconductor LED, and has significance for seeking an optimal encapsulation material and an optimal encapsulation structure, improving the thermal reliability of the LED and saving the cost.

Description

technical field [0001] The invention relates to a semiconductor light-emitting diode (LED) testing technology, in particular to a method for testing the effective heat dissipation of a semiconductor light-emitting diode packaging structure. technical background [0002] LED is an injection electroluminescent device. Under the action of an external electric field, the radiative recombination of electrons and holes converts part of the energy into light energy, while the lattice oscillation generated by non-radiative recombination converts the rest of the energy into heat energy. For the power LED with mature technology at present, its electro-optical conversion efficiency is only about 30%, that is, about 70% of the input electric energy is converted into heat energy. For semiconductor devices, as the temperature changes, its characteristics will be obvious. The change. Especially for LEDs, the increase in junction temperature will lead to changes and attenuation of the opti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01M11/00
Inventor 俞立明程立文陆卫张波罗向东郭少令何素明傅雷陈效双杨卫桥郭延生
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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