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Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer

A technology of converters and insulating barriers, which is applied in the protection field of high-power converters, can solve problems such as excessive delays in soft-off circuits, and achieve the effect of increasing complexity

Inactive Publication Date: 2011-01-19
乌云翔
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a novel short-circuit shutdown method, which improves the bypass switch control method of the traditional soft-off circuit, and can solve the defect of excessive delay of the soft-off circuit switch , and while maintaining the advantages of soft turn-off technology to reduce overshoot voltage

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  • Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer
  • Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer
  • Short-circuit shutoff method for insulated gate bipolar transistor (IGBT) of high-power current transformer

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Embodiment Construction

[0022] Preferred embodiments of the present invention are described in detail as follows in conjunction with accompanying drawings:

[0023] The implementation circuit example of the present invention is Figure 6 As shown, compared with the common soft turn-off circuit, the implementation circuit only adds a simple gate-emitter voltage measurement comparison circuit (10). The realization of the comparison circuit is completed by an ordinary operational amplifier comparator, and the inputs of the comparator are the gate-emitter voltage feedback (11) and the gate-emitter voltage threshold (12). The gate-emitter voltage threshold is the IGBT switching threshold plus 1 volt. The gate voltage judgment signal (9) is given after the comparator inverts the output. The gate voltage judgment signal outputs a high signal when the gate-emitter voltage feedback is lower than or equal to the gate-emitter voltage threshold, indicating that it has entered the shutdown implementation stage ...

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Abstract

The invention discloses a short-circuit shutoff method for an insulated gate bipolar transistor (IGBT) of a high-power current transformer, which is applied in the fields of wind power current transformers and current transformers for ships and the like. The shutoff method for a bypass switch of the conventional short-circuit soft shutoff technique is improved, a detection circuit in a gate voltage discharge process is increased for detecting the gate voltage during discharging, and the bypass switch is actuated to enter the soft shutoff process after the preliminary discharge process of the gate voltage is finished. The method overcomes the defect of long shutoff time delay of the conventional soft shutoff technique, reduces the delay time of the conventional short-circuit soft shutoff during discharging, shortens the operating time of the soft shutoff operation, and increases the survival rate of the IGBT in the short-circuit process.

Description

Technical field: [0001] The invention relates to a novel protection method for high-power converters, which can be applied to any high-power converter applications including wind power converters and marine propulsion converters. The method is applied to the gate drive circuit of the insulated gate bipolar transistor (IGBT) of the converter. The invention realizes shutting off as fast as possible when the insulated gate bipolar transistor (IGBT) is short-circuited, and can also protect the IGBT from being damaged by excessive voltage overshoot. Background technique: [0002] High-power converters have a broad application background and have become one of the core equipment in many industries. Due to the characteristics of large voltage and current application range and fast switching speed, the insulated gate bipolar transistor (IGBT) is currently the mainstream The core switching device in high-power converters. [0003] The insulated gate bipolar transistor (IGBT) is a f...

Claims

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Application Information

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IPC IPC(8): H02H7/08
Inventor 乌云翔邵诗逸朱臻聂赞相杜欣立徐奕翔
Owner 乌云翔
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