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Base, film forming device and film forming method

A technology of a film forming device and a film forming method, which is applied to gaseous chemical plating, coatings, electrical components, etc., can solve the problems of uneven temperature distribution, uneven thickness of epitaxial film, damage or slip of base 302, etc.

Active Publication Date: 2011-01-12
NUFLARE TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the temperature distribution of the silicon wafer 301 is not uniform, and the film thickness of the formed epitaxial film is also not uniform.
In addition, thermal stress concentrates on the contact portion between the silicon wafer 301 and the first base portion 302a, and there is also a problem that the base 302 is damaged or slipped.

Method used

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  • Base, film forming device and film forming method
  • Base, film forming device and film forming method
  • Base, film forming device and film forming method

Examples

Experimental program
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Embodiment Construction

[0028] figure 1 It is a schematic cross-sectional view of the sheet-fed film-forming apparatus 100 of this embodiment.

[0029] In this embodiment, a silicon wafer 101 is used as a substrate. However, it is not limited thereto, and wafers made of other materials may also be used depending on circumstances.

[0030] The film forming apparatus 100 has a chamber 103 as a film forming chamber.

[0031] The upper part of the chamber 103 is provided with a gas supply unit 123 for supplying source gases for forming a crystal film on the surface of the heated silicon wafer 101 . Furthermore, a shower plate 124 having a plurality of discharge holes for raw material gas is connected to the gas supply unit 123 . By arranging the shower plate 124 to face the surface of the silicon wafer 101 , the source gas can be supplied to the surface of the silicon wafer 101 .

[0032] A plurality of gas exhaust units 125 are provided at the lower part of the chamber 103 for exhausting the reacte...

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Abstract

The invention provides a base, a film forming device and a film forming method. According to the embodiment, the base is provided with: an annular first base part for supporting the peripheral part of a silicon crystal sheet; and a second base part installed in connection with the peripheral part of the first base part and used for shielding the opening part of the first base part. The second base part is such configured that a clearance with a predetermined distance H is formed between the second base part and the silicon crystal sheet under the condition that the silicon crystal sheet is supported on the first base part and that a clearance continuous to the above clearance in which the distance is substantially the same as the predetermined distance is also formed between the second base part and the first base part.

Description

technical field [0001] The present invention relates to a susceptor, a film forming device and a film forming method using the susceptor. Background technique [0002] Epitaxial growth (epitaxial growth) technology is used in the manufacturing process of semiconductor elements that require relatively thick crystalline films such as power devices such as IGBTs (Insulated Gate Bipolar Transistors). [0003] In order to produce thicker epitaxial wafers with higher yields, it is necessary to continuously bring new raw material gases into contact with the uniformly heated wafer surface to increase the film formation rate. Therefore, epitaxial growth is performed while rotating the wafer at high speed (for example, refer to Japanese Patent Application Laid-Open No. 5-152207). [0004] In Japanese Patent Application Laid-Open No. 5-152207, a ring-shaped susceptor supporting a wafer is fitted on a susceptor holder, and a rotation shaft connected to the susceptor holder rotates, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCH01L21/68785H01L21/68735C23C16/4586H01L21/0262
Inventor 东真也平田博信
Owner NUFLARE TECH INC
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