Device and method for removing impurities in pipeline and furnace tube

A technology for purifying tubes and furnace tubes, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve problems such as the adverse effects of the process and affect the accurate flow control of MFC, and achieve the effect of accurate flow control.

Active Publication Date: 2010-09-08
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

These impurity particles will adhere to the TEOS gas pipeline 103, on the wafer, and on the inner wall of the furnace tube 102, which will adversely affect the subsequent processes and affect the accurate flow control of the MFC.

Method used

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  • Device and method for removing impurities in pipeline and furnace tube
  • Device and method for removing impurities in pipeline and furnace tube
  • Device and method for removing impurities in pipeline and furnace tube

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Embodiment Construction

[0033] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0034] In the present invention, a heating belt is added outside the TEOS gas pipeline between the box for storing TEOS and the furnace tube for deposition, and the TEOS gas remaining in the TEOS gas pipeline, MFC and furnace tube is purified at high temperature, and adopts Nitrogen is used as a cleaning gas to clean the high-temperature TEOS gas from the device, effectively remove TEOS impurities in the TEOS gas pipeline and furnace tube, and enable the MFC to accurately control the flow rate in the next deposition process.

[0035] image 3 It is a schematic diagram of the device for high-temperature purification after the deposition process is completed in the present invention.

[0036] After the deposition process is completed, the wafer boat 101...

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Abstract

The invention discloses a device for removing impurities in a pipeline and a furnace tube, which is applied after the process of depositing wafer. A flow controller is arranged in a tetraethoxysilane TEOS gas pipe. The device comprises a heating band and a cleaning gas pipe, wherein the heating band is positioned outside the TEOS gas pipe and the cleaning gas pipe is connected to the TEOS gas pipe and the furnace tube. The invention discloses a method for removing impurities in the pipeline and the furnace tube, comprising the steps of heating the TEOS gas in the TEOS gas pipe and the furnace tube and blowing in cleaning gas. Through the device and method of the invention, the TEOS gas resided in the TEOS gas pipe and the furnace tube can be efficiently removed and the MFC can accurately control the flow so as to solve the problem of product defects caused by the resided impurities in the manufacturing process of integrated circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a device and method for purifying impurities in pipelines and furnace tubes. Background technique [0002] At present, with the increase of chip integration, the device becomes smaller, and the device size must be proportionally reduced. Therefore, the precision requirements in the semiconductor manufacturing process are getting higher and higher. In the process for manufacturing semiconductor devices, such as deposition process and etching process, in the case of supplying various gases or liquids to the semiconductor device manufacturing process, a flow controller is usually provided on the supply flow path, Such as a mass flow controller (MFC), whereby the flow is controlled. Due to the pollution of impurities, the pipeline will be blocked, causing the actual gas flow through the MFC to deviate from the displayed flow. For 45nm or even finer technical re...

Claims

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Application Information

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IPC IPC(8): H01L21/00
Inventor 唐兆云何有丰
Owner SEMICON MFG INT (SHANGHAI) CORP
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