Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Insulated gate bipolar transistor (IGBT) protection circuit and motor control system

A bipolar transistor and protection circuit technology, applied in emergency protection circuit devices, electrical components, etc., can solve the problems of high current change rate of insulated gate bipolar transistors, easy damage of IGBTs, etc., to protect from damage and increase shutdown. time, the effect of reducing the rate of change of current

Active Publication Date: 2010-06-23
BYD CO LTD
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the embodiments of the present invention is to provide a protection circuit for an IGBT, which aims to solve the problem that the IGBT is easily damaged due to the high rate of change of the current of the IGBT due to the hard turn-off method in the prior art.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated gate bipolar transistor (IGBT) protection circuit and motor control system
  • Insulated gate bipolar transistor (IGBT) protection circuit and motor control system
  • Insulated gate bipolar transistor (IGBT) protection circuit and motor control system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0016] The IGBT protection circuit provided by the embodiment of the present invention adopts a slow turn-off circuit, so that when the IGBT is under overcurrent protection, the turn-off time of the IGBT is increased, the rate of change of current is reduced, and the IGBT is protected from damage.

[0017] The IGBT protection circuit provided by the embodiment of the present invention is mainly used in the motor control system of electric vehicles or hybrid vehicles, and its module structure is as follows: figure 1 As shown, for ease of description, only the parts related to the embodiment of the p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an insulated gate bipolar transistor (IGBT) protection circuit and a motor control system, belonging to the filed of the motor control. The IGBT protection circuit comprises a sampling circuit, a feeding back circuit, a driving circuit and a slow turn-off circuit. The IGBT protection circuit adopts the slow turn-off circuit, thus the turn-off time of the IGBT is prolonged, the current change rate is reduced and the IGBT is protected against damage when the IGBT carries out the over-current protection.

Description

technical field [0001] The invention belongs to the field of motor control, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) protection circuit and a motor control system. Background technique [0002] When a high-power insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is working, a short-circuit overcurrent is caused by a motor stall or an overcurrent is caused by a series connection between the upper and lower bridge IGBTs. The overcurrent protection circuit in the prior art generally adopts a hardware Shutdown, once an excessive current is detected, the IGBT will be turned off immediately. When the protection circuit immediately executes the shutdown, it will cause a high rate of change of the IGBT current, resulting in a high voltage. These spikes may exceed the withstand voltage of the IGBT range, damage the IGBT. Contents of the invention [0003] The purpose of the embodiments of the present i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/122
Inventor 杨广明黄炳健
Owner BYD CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com