Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electrostatic chucking apparatus and method for manufacturing the same

An electrostatic chuck, DC electrode technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of short service life, reduced productivity, inaccurate temperature adjustment, etc.

Inactive Publication Date: 2010-06-09
JUSUNG ENG
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the short life of the electrostatic chuck 20, the electrostatic chuck 20 has to be replaced frequently, thus reducing productivity and increasing maintenance costs
[0013] Due to the different thermal conductivity of the base member 10 and the insulating member 22 of the electrostatic chuck 20, and the distance of the channel 15 from the substrate, it is difficult to achieve a uniform temperature across the substrate
Also, it is difficult to achieve a uniform temperature gradient across the substrate due to imprecise temperature regulation in the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic chucking apparatus and method for manufacturing the same
  • Electrostatic chucking apparatus and method for manufacturing the same
  • Electrostatic chucking apparatus and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0037] Hereinafter, an electrostatic chuck device and a method of manufacturing the electrostatic chuck device according to the present invention will be described with reference to the accompanying drawings.

[0038] figure 2 An electrostatic chuck device according to one embodiment of the invention is shown.

[0039] refer to figure 2 , an electrostatic chuck device according to an embodiment of the present invention includes a base member 200 and an electrostatic chuck 300.

[0040] The base member 200 is made of metal material. For example, the base member 200 may be made of aluminum (A1). The base member 200 may include an additional extension on which the electrostatic chuck 300 is mou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An electrostatic chucking apparatus and a method for manufacturing the same is disclosed, which is capable of enabling the increase of lifetime of an electrostatic chuck and realizing a uniform temperature gradient in an entire substrate by preventing an insulating material from being etched, the electrostatic chucking apparatus comprising a base member; and an electrostatic chuck, loaded onto the base member, for chucking a substrate by an electrostatic force, wherein the electrostatic chuck comprises an insulating member formed on the base member and provided with a plurality of first insulating sheets of aluminum nitride; a heater for heating the substrate, the heater positioned among the plurality of first insulating sheets; a direct current electrode formed on at least one first insulating sheet provided above the heater among the plurality of first insulating sheets, the DC electrode electrically connected with a direct current power source; and an insulator etch stopping layer, formed of aluminum oxide on an entire surface of the insulating member, for preventing the insulating member from being etched.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. P2008-0105949 filed on October 28, 2008, which is hereby incorporated by reference as if fully set forth herein. technical field [0003] The present invention relates to an electrostatic chuck and a manufacturing method thereof, more particularly, to an electrostatic chuck device and a manufacturing method thereof, the electrostatic chuck device can prolong the service life of the electrostatic chuck by preventing the insulating material from being etched, and A uniform temperature gradient across the entire substrate is achieved. Background technique [0004] Generally speaking, semiconductor devices, flat panel display devices or solar cells can be fabricated through the processes of oxidation, deposition and etching. These processes are performed with the substrate fixedly loaded on the chamber. In order to securely load the substrate onto the c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/00
CPCH01L21/6831H01L21/67103Y10T156/10H01L21/687H01L21/68
Inventor 南昌吉
Owner JUSUNG ENG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products