Electric power switching device and its abnormal test method

Abstract

To protect a power converter by detecting the abnormality of a gate driving circuit and the abnormality of an IGBT element certainly, in a power converter which is constituted of a plurality of IGBT elements. This power converter is composed of a control circuit 100, a pulse generating circuit 200 which generates command pulses to each IGBT, a plurality of gate driving circuits 400a-400n which control the ON-OFF action of the IGBTs, according to the inputted command pulses, IGBTs 500a-500n which are connected to each gate driving circuit, and an abnormality detecting circuit 300. The abnormality detecting circuit judges the disconformity between command pulses RPa-RPn and gate feedback signals FBPa-FBPn outputted from the gate driving circuits. In case that the disconformity state has continued for a certain time, the circuit judges it abnormal, and outputs a signal SUP to switch off all command pulses to the pulse generating circuit.

Description

[0001] This application is a divisional application of an invention application with a filing date of August 9, 2007 and an application number of 2007101407636. The invention and creation name of this application is a power conversion device and an abnormality detection method thereof. technical field [0002] The present invention relates to a power conversion device capable of controlling the conduction state by applying a voltage applied to a control input of the element and performing power conversion using a plurality of voltage-driven semiconductor elements, particularly having a device for detecting an abnormality of the voltage-driven semiconductor element A power conversion device of a mechanism and an abnormality detection method thereof. Background technique [0003] Insulated gate bipolar transistors (Insulated Gate Bipolar Transistor: IGBT) are representative of voltage-driven semiconductor devices, and are widely used in power conversion devices. Hereinafter, i...

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Problems solved by technology

[0008] However, in the conventional methods, the overcurrent is cut off by the IGBT itself, so when the current cutoff function is lost due to a failure of the IGBT itself, there is a problem that protection cannot be performed.

Furthermore, there is also a problem that the IGBT cannot be protected when wrong on / off control of the IGBT is performed due to a malfunction or failure of the gate drive circuit.

[0009] In addition, in a power conversion device composed of a plurality of IGBTs, a failure to cut off the current of one IGBT element causes an overcurrent of other IGBT elements, causing damage to multiple IGBT elements.

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