High-speed thyristor

A thyristor, fast technology, applied in the direction of thyristor, electrical components, circuits, etc., can solve the problems of poor gate control opening uniformity, poor opening dynamic thermal symmetry, long gate control opening time, etc., to improve economic and social benefits , Improve the gate control turn-on time, improve the effect of related performance

Inactive Publication Date: 2010-03-31
HANGZHOU HANAN SEMICON
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AI Technical Summary

Problems solved by technology

[0002] Conventional KK200A-KK1600A series fast thyristors have long gate control turn-on time, low di / dt and dv / dt tolerance, poor gate control turn-on uniformity, poor turn-on dynamic thermal symmetry, poor high temperature reliability, low on-state current, on-state Features such as high pressure drop

Method used

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Embodiment Construction

[0011] The following structural drawings further illustrate:

[0012] Such as figure 1 As shown, this kind of fast thyristor includes a circular central gate 1 in the center of its cathode side, and an inner base circle with a gear-type amplifying gate at a certain distance from the outer edge of the circular central gate 1 in the radial direction. 2+7. The outer base circle 3 of the convex amplifying gate and the involute multi-finger amplifying gate of the involute amplifying gate sub-finger 4. The amplifying gate index increases appropriately with the increase of the device specification. Set the edge chamfer Δ with the inner circle 5 and the outer circle 6 as the boundary at a certain distance from the end of the radial distance amplification gate sub-finger 4, and set the center gate 1 and the involute multi-finger amplification gate 2+7-3-4 Circular conventional short-circuit points of a certain diameter are distributed with a certain density and regularity on the catho...

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Abstract

The invention relates to a high-speed thyristor of a KK200A-KK1600A series. The high-speed thyristor comprises a center gate electrode, a gear type enlarged gate electrode inner base circle, a bulge type enlarged gate electrode outer base circle, an evolvent type enlarged gate electrode separate finger, an edge chamfer angle using an inner circle and an outer circle as boundaries, and a conventional short-circuit point. The high-speed thyristor is characterized in that an aluminum layer of the evolvent type enlarged gate electrode separate finger is connected with a center enlarged gate electrode. The high-speed thyristor is helpful for improving correlative performances of a complete machine system which is designed and manufactured by adopting devices of the series, has a better market prospect, and is favorable for obviously improving the economic benefits and the social benefits of the devices of the series and correlative products of the complete machine system.

Description

technical field [0001] The present invention relates to a high-power semiconductor device-power thyristor, in particular to a KK200A-KK1600A series fast thyristor with an involute multi-finger amplifying gate structure. Background technique [0002] Conventional KK200A-KK1600A series fast thyristors have long gate control turn-on time, low di / dt and dv / dt tolerance, poor gate control turn-on uniformity, poor turn-on dynamic thermal symmetry, poor high temperature reliability, low on-state current, on-state High pressure drop and so on. Contents of the invention [0003] The purpose of the present invention is to provide a fast thyristor, thereby significantly improving the fast thyristor gate control turn-on time, di / dt and dv / dt tolerance, gate control turn-on uniformity, turn-on dynamic thermal symmetry, high temperature reliability, properties such as on-state current and on-state voltage drop. [0004] For realizing the purpose of the present invention, this adopts f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/74H01L29/423
Inventor 王勇张海鹏
Owner HANGZHOU HANAN SEMICON
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