Baffle plate and substrate processing apparatus

A technology for a substrate processing device and a buffer plate, which is applied to discharge tubes, electrical components, plasma, etc., can solve the problems of slow processing speed, uniformity (decreased in-plane uniformity, etc.)

Inactive Publication Date: 2011-07-20
TOKYO ELECTRON LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even when the above-mentioned buffer plate is used, in the processing space on the substrate, since the flow of the processing gas is formed from the center portion of the substrate toward the peripheral edge portion, for example, compared with the center portion of the substrate, etc. There is a problem that the processing uniformity (in-plane uniformity) of the peripheral part is lowered due to slow processing speed, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Baffle plate and substrate processing apparatus
  • Baffle plate and substrate processing apparatus
  • Baffle plate and substrate processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Hereinafter, embodiments of the present invention will be described with reference to the drawings. figure 1 It is a configuration diagram showing a buffer plate and a plasma etching apparatus 1 as a substrate processing apparatus according to the present embodiment.

[0035] The plasma etching apparatus 1 has a processing chamber 2 whose interior can be closed airtightly (gas-tightly) and processes a substrate (semiconductor wafer W in this embodiment) therein. The processing chamber 2 is formed in a substantially cylindrical shape, for example, from aluminum whose surface has been anodized, and is electrically grounded. In addition, an opening for carrying the semiconductor wafer W into and out of the processing chamber 2 and a gate valve for airtightly closing the opening are provided on the side wall of the processing chamber 2 (both are not shown in the figure).

[0036] A susceptor (mounting table) 3 configured to place a semiconductor wafer W and serve as a lowe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A baffle plate, provided in a processing chamber for processing a substrate therein such that the baffle plate is disposed around a mounting table for mounting the substrate thereon, has a plurality of gas exhaust holes, through which a gas is exhausted from the processing chamber. The baffle plate has a stacked structure including a plurality of plate-shaped members. The baffle plate includes a pressure adjustment gas supply passageway to supply a pressure adjustment gas for adjusting a pressure in the processing chamber.

Description

technical field [0001] The present invention relates to a buffer plate and a substrate processing apparatus used for plasma processing of a substrate or the like. Background technique [0002] Conventionally, substrates such as semiconductor wafers and glass substrates for liquid crystal display devices are housed in a processing chamber and subjected to predetermined processing using a substrate processing apparatus, for example, in a manufacturing process of a semiconductor device. As such a substrate processing apparatus, for example, there is known a structure in which a mounting table for mounting a substrate is provided in a processing chamber, and a shower head for supplying a processing gas is provided to face the mounting table. The substrate placed on the stage is supplied with processing gas. In addition, it is also known that a buffer plate (also referred to as an exhaust plate) having a plurality of exhaust holes (consisting of circular holes, long holes, polyg...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/311H01L21/3213H01L21/00H05H1/24
CPCH01J37/32633H01J37/32623H01J37/3244H01L21/67069H01J37/32449H01L21/205H01L21/3065
Inventor 饭塚八城
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap