Preparation method for thin-film transistor array substrate and liquid crystal display panel

Abstract

The invention discloses a production method of a thin-film transistor array base plate. The production method integrates the production of a photosensor, and a photosensitive dielectric layer is formed between a transparent conducting layer and a metal electrode for sensing external light. The photosensor adopts the transparent conducting layer as an electrode, so the external light can penetrate the transparent conducting layer and directly irradiate on the photosensitive dielectric layer, thus significantly increasing the light-sensing area of the photosensor and promoting the optical sensing effectiveness thereof. Moreover, another side of the photosensitive dielectric layer can be a metal electrode, thereby effectively resisting the direct irradiation from a backlight source on the photosensitive dielectric layer and avoiding the noise effect. A production method of a LCD panel adopting the thin-film transistor array base plate is also proposed.

Description

technical field [0001] The invention relates to a manufacturing method of a thin film transistor array substrate, and in particular to a manufacturing method of a thin film transistor array substrate integrated with a light sensor. Background technique [0002] With the popularity of liquid crystal and plasma displays, the flat panel display has become a so-called multimedia platform (Multimedia Board) in addition to viewing images. The ambient light (Ambient Light) sensing function integrated in the flat panel display is a new proposal of current display technology, which mainly builds a light sensor in the flat panel display to detect the intensity of ambient light. [0003] The current common ambient light sensing technology is to form p-i-n (positively doped / undoped / negatively doped) photosensors on the glass substrate of the display panel by Low Temperature Poly-Silicon (LTPS) process. However, due to process limitations, the p-i-n photosensor fabricated by the LTPS te...

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Problems solved by technology

However, due to process limitations, the p-i-n photosensor fabricated by LTPS technology will cause poor photoelectric conversion efficiency due to insufficient polysilicon film thickness)

In addition, the light emitted by the backlight will directly irradiate the p-i-n photosensor through the glass substrate, thereby affecting the photosensitive characteristics of the p-i-n photosensor, reducing the signal-to-noise ratio (SNR) of the photosensitive signal, resulting in distortion of the measurement results

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