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Schottky diode equivalent circuit model and parameter extracting method thereof

A Schottky diode and equivalent circuit model technology, which is applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problem that the electrical model is too simple, the efficiency and practicability need to be improved, and the simulation accuracy cannot reach the radio frequency Integrated circuit design precision requirements and other issues, to achieve the effect of improving extraction efficiency

Active Publication Date: 2009-05-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Application Information

AI Technical Summary

Problems solved by technology

However, the Schottky diode equivalent circuit electrical model developed before is often too simple, and the simulation accuracy in the radio frequency field cannot meet the design accuracy requirements of radio frequency integrated circuits
At the same time, the model parameter extraction method related to the electrical model of the equivalent circuit is far from perfect, and its efficiency and practicability need to be improved

Method used

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  • Schottky diode equivalent circuit model and parameter extracting method thereof
  • Schottky diode equivalent circuit model and parameter extracting method thereof
  • Schottky diode equivalent circuit model and parameter extracting method thereof

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Embodiment Construction

[0011] Schottky diode equivalent circuit model of the present invention is as figure 2 As shown, it includes: an inductor L1, a resistor R1, a single Schottky diode D1, a resistor R2, and an inductor L2 are connected in series between the N-well terminal and the metal terminal, and a Schottky diode is connected in parallel at both ends of the single Schottky diode D1 Diode parasitic capacitance C4. In addition, the N well end is connected to the ground through the reverse N well, the P substrate parasitic diode D2 and the parallel silicon substrate parasitic resistance R3 and silicon substrate parasitic capacitance C1; the metal end is connected to the ground through the wiring dielectric parasitic capacitance C3 and the parallel silicon substrate The bottom parasitic resistance R4 and the silicon substrate parasitic capacitance C2 are connected to ground.

[0012] The test process of the Schottky diode equivalent circuit model of the present invention includes: (1) the dire...

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Abstract

The invention discloses an equivalent circuit model for a schottky diode, which comprises a single-body part model of the schottky diode, as well as parasitic resistor and parasitic inductance parts which are serially connected with the single-body part of the schottky diode. Two port parts of the model are in parallel connected with a parasitic PN junction structure and a parasitic silicon substrate structure respectively. The model integrally comprises the influence of various parts related to a physical structure of the schottky diode on electrical characteristics of direct current and high frequency of the schottky diode, so the model can be directly used for circuit simulation of direct current and high frequency of the schottky diode, and can be conveniently used for stimulating the electrical characteristics of direct current and high frequency of the schottky diode. The invention also provides a test flow and a parameter extraction method based on the model, which can largely improve the extraction efficiency of parameters of an equivalent circuit electrical model of the schottky diode and the fitting effect of the model on electrical characteristics of devices.

Description

technical field [0001] The invention relates to an equivalent circuit electrical model of a semiconductor device, in particular to a schottky diode equivalent circuit model. The present invention also relates to a parameter extraction method based on the above model. Background technique [0002] Schottky diodes are one of the devices used in modern semiconductor integrated circuits. Especially in the design of radio frequency integrated circuits, the device has a wide range of applications. Therefore, Schottky diodes are often classified as radio frequency devices. Such as figure 1 As shown, the structure of the existing common Schottky diode mainly includes the anode end composed of metal and metal silicide, and the cathode end composed of ohmic contact, N+ cathode layer and N well. The Schottky barrier is shown in Fig. Metal and N wells. [0003] In the application of modern integrated circuits, the accuracy of circuit design often depends on the accuracy of the elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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