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Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer

A technology of epitaxial wafers and epitaxial films, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve the problems of increased thickness deviation of epitaxial wafers, achieve the effect of small thickness deviation and improve flatness

Active Publication Date: 2009-05-06
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the thickness of the epitaxial wafer as a finished product is smaller at the peripheral portion than at the central portion, so that the thickness variation of the entire epitaxial wafer increases.

Method used

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  • Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer
  • Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer
  • Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer

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Embodiment Construction

[0038] Embodiments of the present invention will be described below with reference to the drawings. The drawings referred to in the following description are for explaining the configuration of the epitaxial film forming apparatus and the like according to the present embodiment, and the size, thickness, and dimension of each part in the illustration may differ from the dimensional relationship of the actual apparatus and the like.

[0039] Below, refer to Figure 1 ~ Figure 4 , an example of the epitaxial film forming apparatus of this embodiment will be described. figure 1 is a cross-sectional view showing an example of the epitaxial film forming apparatus of this embodiment, figure 2 It is a perspective view showing a susceptor included in the epitaxial film forming apparatus. and image 3 With figure 2 The partial sectional view corresponding to the line A-A' of Figure 4 yes means figure 2 An enlarged cross-sectional view of the main part of the pedestal. Such a...

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Abstract

The present invention provides a base used by an epitaxial film forming device. The base is installed in the film forming chamber of epitaxial film forming device and is provided with a dent which is used for containing a semiconductor chip and is approximately circular in overhead view. The dent is installed with a projection which supports the semiconductor chip and is approximately circular in overhead view. The diameter of projection is smaller than that of the dent. Furthermore the diameter of projection is set to a size that the reacting gas for vapor growth reaction can wholly circulate at the interface between the projection and the semiconductor chip when the semiconductor chip is loaded on the dent.

Description

[0001] This application claims the priority of Japanese Patent Application No. 2007-284512 for which it applied on October 31, 2007, The content is used in this specification. technical field [0002] The present invention relates to a suscepter for an epitaxial film forming apparatus, an epitaxial film forming apparatus, an epitaxial wafer, and a method for manufacturing the epitaxial wafer. Background technique [0003] Conventionally, as an epitaxial film forming apparatus for vapor-phase-growing an epitaxial film on a semiconductor wafer, apparatuses of various structures differing in heating methods and shapes of susceptors have been proposed. Specifically, there is known a vertical epitaxial film forming apparatus that heats a susceptor on a circular flat plate from the lower side; A sheet-type epitaxial film forming apparatus for heating up and down; and a barrel-type epitaxial film forming apparatus for heating a cylindrical susceptor with a side high-frequency coil ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/12
CPCC30B25/12H01L21/68764H01L21/68785C23C16/4588
Inventor 金原秀明
Owner SUMCO CORP
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