Image display system and fabrication method thereof

Abstract

The invention provides a method for fabricating a low-temperature polysilicon (LTPS) driving circuit and thin film transistor. The method includes: providing a substrate, forming an active layer, forming a gate insulating layer, forming a dielectric layer having an extending portion and forming a gate electrode. The extending portion of the dielectric layer and the gate electrode are formed during the same step, and they can serve as a mask during a later doping process so that a lightly doped source / drain region and a source / drain region are formed during the same time without forming extra masks.

Description

technical field [0001] The invention relates to a display device, in particular to a low-temperature polysilicon thin film transistor liquid crystal display device and a manufacturing method thereof. Background technique [0002] Generally speaking, thin film transistors (thin film transistors; TFTs) can be classified into amorphous silicon (amorphous) thin film transistors and polycrystalline silicon (polysilcion) thin film transistors. Polysilicon thin film transistors are manufactured using low-temperature polysilicon (LTPS) technology, and are quite different from amorphous silicon thin film transistors made by amorphous silicon (a-Si) technology. Low temperature polysilicon (LTPS) transistors have a large electron mobility (>20cm 2 / Vsec), therefore, the LTPS transistor has relatively preferable size, larger aperture ratio and lower power consumption. In addition, the low-temperature polysilicon process can manufacture the driving circuit and the thin film transist...

AI Technical Summary

Problems solved by technology

[0003] However, the fabrication of traditional low-temperature polysilicon driving circuits and thin film transistors requires 8 or 9 photomasks, which leads to higher production costs.

In addition, more photomasks also lead to longer production time and lower production yield

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