Forming method for micro crystal silicon film

Abstract

The present invention discloses a method for manufacturing a hydrogenated microcrystalline silicon film. Firstly a hydrogenated microcrystalline silicon seeding layer having a crystal nucleus is formed on a substrate, and then a hydrogenated amorphous silicon film with a thickness of no more than 3 micrometers is formed quickly by a plasma chemical vapor deposition method. Afterwards the material is put under high pressure hydrogen circumstance which is no less than 500 atmospheres, and at temperature no more than 300 DEG.C, the duration is 3 to 10 hours, thereby the hydrogenated microcrystalline silicon suitable for photoelectric conversation is obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and in particular relates to the preparation technology of thin-film solar cell materials. Background technique [0002] Solar photovoltaic power generation is one of the important ways to obtain renewable energy that is beneficial to the environment. In recent years, thin-film photovoltaic cells and large-area photovoltaic modules have attracted more and more attention from the world. In particular, hydrogenated amorphous silicon, nanocrystalline silicon, and microcrystalline silicon have shown great potential with the wide application of photovoltaic devices in commercial and residential installations. A notable feature of producing thin-film silicon photovoltaic devices at a relatively low temperature below 260°C is that semiconductor films and electrical contact films with excellent performance related to silicon can be deposited on a large area. At the same time, substrates...

AI Technical Summary

Problems solved by technology

[0006] Although microcrystalline silicon is a potential material for thin-film solar cells, its current obvious disadvantages are the lengthy and complicated process of its growth, and the need to use sophisticated and expensive plasma deposition equipment, the productivity is very low, and it consumes a large amount of high-purity silicon. The source gas (mainly hydrogen), especially in large-area coating, its uniformity is very difficult to guarantee, especially in high-speed deposition

Another obvious problem is that this material is very sensitive to impurities in the vacuum chamber, so usually a coating system with multiple vacuum chambers must be used to deposit the p-layer, n-layer and i-layer separately

The above problems make microcrystalline silicon solar cells directly grown by plasma chemical vapor phase uncompetitive at low cost

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