Image sensor structure and manufacturing method thereof
A technology of an image sensor and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, radiation control devices, electrical components, etc., can solve the problems of increased density of pixel area image sensors, deterioration of crosstalk phenomenon, etc.
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[0030] The image sensor of the preferred embodiment of the present invention and the method for forming it are described in more detail below using process cross-sectional diagrams. In each embodiment of the present invention, the same symbols represent the same components.
[0031] Please refer to Figures 2a to 2f , which shows a series of cross-sectional process diagrams of the image sensor structure 100 according to the preferred embodiment of the present invention. Please refer to FIG. 2a, the main components forming the image sensor structure 100 of the preferred embodiment of the present invention include a substrate 110, which includes a plurality of pixel regions 210, and the substrate 110 can be a silicon substrate, a silicon on insulator (silicon on insulator, SOI) substrate or other semiconductor material substrates. A plurality of shallow trench isolations (shallow trench isolation, STI) 122 are formed in the substrate 110 . One or more image sensor circuit stru...
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