Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light emission device

A technology for display devices and transistors, which can be used in identification devices, lighting devices, electroluminescence light sources, etc., and can solve problems such as increased power consumption

Inactive Publication Date: 2008-04-09
SEMICON ENERGY LAB CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0054] From the above description, although the reduction in the number of processes is achieved by constructing the pixel portion and the driver circuit by TFTs having a single polarity according to the conventional method, it still causes an increase in power consumption.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light emission device
  • Light emission device
  • Light emission device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0138] An example of performing SES driving including an erasing period using pixels with an additional erasing mechanism is described in Embodiment 1.

[0139] 2A and 2B illustrate pixel structures with the erasing mechanism of Embodiment 1. FIG. As shown in FIG. 2A, a pixel has a switch TFT 201, a driver TFT 202, an EL element 204, a source signal line (S), a gate signal line (G), and a current supply line (current), which are similar to conventional parts, and have a The voltage compensation circuit 210 of the voltage compensation circuit of Embodiment Pattern 1. In addition to the gate signal line (G), the pixel in Embodiment 1 also has an erasing gate signal line (Ge). Note that referring to the erasing gate signal line (Ge), the conventional gate signal line in Embodiment 1 is referred to as the write gate signal line.

[0140] FIG. 2B is a circuit diagram including the configuration of the voltage compensation circuit 210 . The voltage compensation circuit 210 has a ...

Embodiment approach 2

[0157] An example of manufacturing a light-emitting device having pixels shown in Embodiment Modes 1 and 2 is described in Embodiment 2.

[0158] A schematic diagram of the light emitting device is shown in Figure 20A. A pixel portion 2001 is placed at the central portion of the substrate 2000 . Although not particularly shown in FIG. 20A, the structure of the pixel is the same as that shown in FIGS. 1A and 1B. A source signal line driver circuit 2002 for controlling source signal lines and a gate signal line driver circuit 2007 for controlling gate signal lines are formed around the pixel portion 2001. One of the gate signal line driver circuits 2007 may also be formed only on one side of the pixel portion 2001 as described above.

[0159] Signals input from the outside for driving the source signal line driver circuit 2002 and the gate signal line driver circuit 2007 are input through the FPC 2010 . Signals input from FPC 2010 have small voltage amplitudes, and thus are c...

Embodiment approach 3

[0193] A pixel having an erasing gate signal line is explained in Embodiment 1, but with such a pixel, the selection timing of the writing gate signal line is different from that of the erasing gate signal line. Thus, one of the gate signal line driver circuits disposed on both sides of the pixel portion shown in FIG. 20B can be configured as a write gate signal line driver circuit, and the other can be configured as an erase gate signal line driver circuit. The circuit configuration can be similar to that described in Embodiment 2, and thus its detailed description is omitted here.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A pixel having a structure in which low voltage drive is possible is provided by a simple process. A digital image signal input from a source signal line is input to the pixel through a switching TFT. At this point, a voltage compensation circuit amplifies the voltage amplitude of the digital image signal or transforms the amplitude, and applies the result to a gate electrode of a driver TFT. On-off control of TFTs within the pixel can thus be performed normally even if the voltage of a power source for driving gate signal lines becomes lower.

Description

field of invention [0001] The present invention relates to light emitting devices. In particular, the present invention relates to the structure of an active matrix light emitting device having thin film transistors (hereinafter referred to as TFTs) fabricated on an insulator such as glass or plastic. The present invention also relates to electronic equipment using a light emitting device in a display portion. Background of the invention [0002] Development of display devices in which self-luminous elements such as electroluminescent (EL) elements are used has been active recently. The term EL element includes either an element utilizing light emission from singlet excitons (fluorescence) or an element utilizing light emission from triplet excitons (phosphorescence). An EL display device is given here as an example of a light emitting device, but display devices using other self-luminous elements are also included in the category of light emitting devices. [0003] An EL...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G09G3/30H01L27/32H05B33/12H01L51/50G09F9/30G09G3/20H04N5/66H05B33/14
Inventor 浅见宗广棚田好文
Owner SEMICON ENERGY LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com