Magnetoelectronics information device having a compound magnetic free layer

A technology of electronic information and magnetons, applied in the field of magnetoelectronics, can solve problems such as anisotropy increasing shape components

Inactive Publication Date: 2009-07-15
EVERSPIN TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Using higher aspect ratios also adds a shape component to the anisotropy associated with the storage elements, although some improvements have been obtained through, for example, patterning techniques with higher aspect ratios

Method used

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  • Magnetoelectronics information device having a compound magnetic free layer
  • Magnetoelectronics information device having a compound magnetic free layer
  • Magnetoelectronics information device having a compound magnetic free layer

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Embodiment Construction

[0013] The following detailed description of the invention is merely illustrative in nature and is not intended to limit the invention or the application and applications of the invention. Furthermore, there is no intention to be bound by any theory presented or implied in the preceding background of the invention or the following detailed description of the invention.

[0014] refer to figure 1 , shows a magnetoelectronic information device 20 according to an exemplary embodiment of the present invention. Although the magnetoelectronic information device 20 is a magnetoresistive random access memory (MARM), other magnetoelectronic information devices and other MRAM elements are also applicable according to the present invention, including but not limited to magnetic sensors and disk drive read / write Write head, described magnetoresistive random access memory (MARM) can be for example the U.S. Patent No. 6,545,906B1 titled "a method for writing scalable magnetoresistive rando...

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Abstract

A magnetoelectronics information device is provided that includes two multi-layer structures and a spacer layer interposed between the two multi-layer structures. Each of the multi-layer structures has two magnetic sublayers and a spacer layer interposed between the two magnetic sublayers. The spacer layer interposed between the two magnetic sublayers provides an antiferromagnetic exchange coupling that is quantified by a saturation field. The spacer layer interposed between the two multi-layer structures provides a second antiferromagnetic exchange coupling is quantified by another saturation field that is less than the first saturation field.

Description

technical field [0001] The present invention generally relates to magnetoelectronics, and more particularly relates to a magnetoelectronic information device with a composite magnetic free layer. Background technique [0002] Magnetotronics, spin electronics, and spintronics are synonymous terms that exploit effects induced by the spin of electrons. Magnetoelectronics is used in various information devices and provides non-volatile, reliable, radiation-hardened, high-density data storage and retrieval. Many magnetoelectronic information devices include, but are not limited to, magnetoresistive access memory (MRAM), magnetic sensors, and read / write heads for disk drives. [0003] Typically, a magnetoelectronic information device such as an MRAM memory element has a structure including a plurality of magnetic layers separated by various nonmagnetic layers. The information is stored as the direction of the magnetization vector in the magnetic layer. The magnetic vectors in o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/14G11CG11C11/16H01L43/08
CPCH01L43/08G11C11/16H10N50/10G11C11/15
Inventor 布莱德雷·N·恩格尔
Owner EVERSPIN TECHNOLOGIES
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