Method of Manufacturing Nonvolatile Memory Device

Abstract

In one embodiment of a method of manufacturing a nonvolatile memory device, a tunnel insulating layer and a charge trap layer are first formed over a semiconductor substrate that defines active regions and isolation regions. The tunnel insulating layer, the charge trap layer, and the semiconductor substrate formed in the isolation regions are etched to form trenches for isolation in the respective isolation regions. The trenches for isolation are filled with an insulating layer to form isolation layers in the respective trenches. A lower passivation layer is formed over an entire surface including top surfaces of the isolation layers. A first oxide layer is formed over an entire surface including the lower passivation layer. Meta-stable bond structures within the lower passivation layer are changed to stable bonds. A nitride layer, a second oxide layer, and an upper passivation layer are sequentially formed over an entire surface including the first oxide layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This is a continuation of U.S. application Ser. No. 12 / 581,293 filed Oct. 19, 2009, which claims the priority benefit under USC 119 of KR 10-2009-0044514 filed May 21, 2009, the entire respective disclosures of which are incorporated herein by reference.BACKGROUND[0002]One or more embodiments of the disclosure relate to a method of manufacturing a nonvolatile memory device and, more particularly, to a method of manufacturing a nonvolatile memory device, which is capable of improving a retention characteristic by suppressing a charge-sharing phenomenon of a dielectric layer.[0003]In general, nonvolatile memory devices retain data even though the supply of power is stopped. A unit cell of a nonvolatile memory device has a structure in which a tunnel insulating layer, a floating gate, a dielectric layer, and a control gate are sequentially stacked in an active region of a semiconductor substrate. As voltage applied to the control gate from th...

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Benefits of technology

[0006]One embodiment relates to a method of manufacturing a nonvolatile memory device, in which a nitride layer and a first oxide layer, which forms a dielectric layer having an ONO structure, are formed over floating gates and isolation layers, and a radical plasma process is performed to improve the film quality of the nitride layer, thereby suppressing a charge sharing phenomenon and improving a retention characteristic. Further, after the ONO dielectric layer is formed, another nitride layer is formed on the ONO dielectric layer, thus making it possible to suppress a smile phenomenon of the ONO dielectric layer, and make the threshold voltage distributions of cells more uniform.

[0007]Another of the embodiments relates to a method of manufacturing a nonvolatile memory device, wherein, after isolation layers are formed, a selective nitrification process is performed to form a nitride layer on only a top surface and sidewalls of a conductive layer for floating gates that is formed in an active region of a semiconductor substrate, thereby being capable of preventing charges, which are trapped in the floating gates, from moving to neighboring gates when the memory device operates, and so improving the distribution and retention characteristics of the memory device.

[0009]Preferably, the radical plasma process is performed to increase the density of the first oxide layer and to improve the film quality of the first oxide layer.

[0022]After forming the dielectric layer, a radical plasma process preferably is performed to increase the density of the dielectric layer and to improve the film quality thereof.

[0023]After forming the passivation layer, a radical plasma process preferably is performed to increase the density of the passivation layer and the dielectric layer and to improve the film quality.

Problems solved by technology

Thus, the leakage current and a reliability characteristic are deteriorated, and a thickness at both edges of the ONO layer is reduced.

Further, there is a problem in that the uniformity of a cell threshold voltage (Vth) distribution deteriorates.

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