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Compound and composition for forming organic film

a composition and organic film technology, applied in the field of compound and composition for forming organic films, can solve the problems of not having a complete etching selectivity between photoresist films, the production process of semiconductor devices is approaching the inherent limit, and it is difficult to produce semiconductor devices in a good yield. , to achieve the effect of excellent gap filling/planarizing characteristics, excellent heat resistance, and superior gap filling and planarizing characteristics

Active Publication Date: 2021-06-01
SHIN ETSU CHEM IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0046]As described above, the inventive compound shown by the general formula (1-1) is a compound that is useful for curing a film forming in inert gas, which prevents a substrate from corrosion, the formation of volatile byproducts and forms an organic under layer film that has superior gap filling and planarizing characteristics. The composition for forming an organic film containing this compound is a material capable of forming an organic film that has excellent gap filling / planarizing characteristics combined with various properties such as heat resistance and etching durability. Accordingly, they are very useful as an organic film material in multilayer resist processes such as a two-layer resist process, a three-layer resist process using a silicon middle layer film, and a four-layer resist process using a silicon middle layer film and an organic bottom antireflective coating as well as a planarization material for producing a semiconductor device. The organic film formed from the inventive composition for forming an organic film is excellent in heat resistance, and is favorably used for patterning without causing fluctuation of the film thicknesses due to thermal decomposition even during the formation of hard mask via a CVD process on the organic under layer film.

Problems solved by technology

Practically, however, there is no dry etching method having a complete etching selectivity between the photoresist film and the substrate to be processed.
On the other hand, the attempt to produce smaller pattern sizes in production processes of semiconductor devices is approaching the inherent limit due to the wavelength of a light source for photolithography.
On the other hand, it is difficult to produce semiconductor devices in a good yield by a single layer resist process since it requires an upper layer resist film to have thicker film thickness for gap filling a stepped or patterned substrate to be processed, thereby causing lower tolerance for pattern forming in exposure such as pattern collapse after exposure and development as well as degradation of a pattern profile due to reflection from a substrate in exposure.
This risks the semiconductor device to fail to attain higher processing speed as it is designed, and fail to attain the yield that can be by industrial manufacturing.
For these materials, however, the actual curing conditions in an inert gas is not exemplified.

Method used

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  • Compound and composition for forming organic film
  • Compound and composition for forming organic film
  • Compound and composition for forming organic film

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

[Synthesis Example 1] Synthesis of Compound (A1)

[0157]

[0158]A mixture of 7.7 g of Diol (B1), 3.0 g of potassium carbonate, and 40 g of N,N-dimethylformamide was heated to 55° C. To the mixture, 2.9 g of 1-bromo-2-butyne was slowly added dropwise, and this was stirred with heating at 55° C. for 20 hours. After cooling to room temperature, 150 g of methyl isobutyl ketone was added thereto. This was washed with water and concentrated in vacuum, and then precipitated with methanol. The yielded solid was filtered off, washed with methanol, and dried in vacuum to give 8.7 g of the object (A1). The following are analytical results of IR and 1H NMR for the synthesized Compound (A1).

[0159]IR (D-ATR): ν=3057, 3029, 2954, 2916, 2867, 1601, 1494, 1476, 1446, 1217, 1005, and 819 cm−1

[0160]1H NMR (600 MHz, DMSO-d6) δ (ppm): 7.94 (d, J=7.3 Hz, 4H), 7.71 (d, J=9.2 Hz, 2H), 7.60 (d, J=9.2 Hz, 2H), 7.51-7.45 (m, 10H), 7.41-7.38 (m, 4H), 7.31-7.28 (m, 6H), 7.28-7.15 (m, 6H), 7.08-7.06 (m, 2H), 4.80 (...

synthesis example 2

[Synthesis Example 2] Synthesis of Compound (A1)

[0162]

[0163]A mixture of 7.7 g of Diol (B1), 3.0 g of potassium carbonate, and 40 g of N,N-dimethylformamide was heated to 55° C. To the mixture, 3.3 g of 80% propargyl bromide toluene solution was slowly added dropwise, and this was stirred with heating at 55° C. for 14 hours. After cooling to room temperature, 150 g of toluene was added thereto. This was washed with water and concentrated in vacuum to give 8.4 g of Propargyl derivative (52).

[0164]Then, under an N2 atmosphere, to a mixture of 8.4 g of Propargyl derivative (52) and 60 mL of tetrahydrofuran cooled to −30° C., 10 mL of 2.65 M n-butyl lithium hexane solution was added, and this was stirred at −30° C. for 1 hour. To this, 4.4 g of dimethyl sulfate was added. This was allowed to gradually raise the temperature to room temperature, heated to 60° C., and stirred for 6 hours. After cooling to room temperature, dilute hydrochloric acid wad added to stop the reaction, and 100 g ...

synthesis example 3

[Synthesis Example 3] Synthesis of Compound (A2)

[0168]To a mixture of 8.78 g of 4,4′-dihydroxybenzophenone and 50 mL of acetone, 17 g of potassium carbonate was added, and 7.9 mL of 1-bromo-2-butyne was added dropwise. The reaction mixture was heated and was heated to reflux overnight. After cooling to room temperature, followed by filtration, the filtrate was concentrated in vacuum. Then, mixed solvent of methanol:Chloroform=9:1 was added thereto, and yielded solid was filtered off to give 10.6 g of Intermediate (B3) shown by the following formula. The following are analytical results of 1H NMR for the synthesized Intermediate (B3).

[0169]

[0170]1H NMR (400 MHz, CDCl3) δ (ppm): 7.81 (d, Ar—H, 4H), 7.05 (d, Ar—H, 4H), 4.75 (s, CH2, 4H), 1.90 (s, CH3, 6H).

[0171]Then, under an N2 atmosphere, to a mixture of 5.44 g of 4,4′-dibromobiphenyl and 50 mL of tetrahydrofuran cooled to −70° C., 23.92 mL of 1.6 M n-butyl lithium hexane solution was added, and this was stirred at −40° C. for 1 hour...

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Abstract

A compound shown by the following general formula (1-1),AR1 and AR2 each independently represent an aromatic ring or an aromatic ring containing at least one nitrogen and / or sulfur atom, two AR1s, AR1 and AR2, or two AR2s are optionally bonded; AR3 represents a benzene, naphthalene, thiophene, pyridine, or diazine ring; A represents an organic group; B represents an anionic leaving group; Y represents a divalent organic group; “p” is 1 or 2; “q” is 1 or 2; “r” is 0 or 1; “s” is 2 to 4; when s=2, Z represents a single bond, divalent atom, or divalent organic group; and when s=3 or 4, Z represents a trivalent or quadrivalent atom or organic group. This compound cures to form an organic film, and also forms an organic under layer film.

Description

TECHNICAL FIELD[0001]The present invention relates to a compound and a composition for forming an organic film containing the compound that are usable in a process for producing a semiconductor device.BACKGROUND ART[0002]Semiconductor devices have been highly integrated and advanced in processing speed by shifting the wavelength of a light source shorter to attain a finer pattern size in lithography technologies using a light exposure (photolithography) as common arts. In order to form such a fine circuit pattern on a semiconductor device substrate (a substrate to be processed), this substrate is usually processed by dry etching using a photoresist film having a formed pattern as an etching mask. Practically, however, there is no dry etching method having a complete etching selectivity between the photoresist film and the substrate to be processed. Accordingly, substrate processing by a multilayer resist process has been commonly used recently. In this method, a middle layer film ha...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G03F7/025C07C13/54C07C43/23G03F7/039C08K5/00C08L49/00H01L21/027H01L21/308
CPCG03F7/0392C07C13/54C07C43/23C08K5/0016C08K5/0025C08L49/00G03F7/025C08L2203/16C08L2203/20H01L21/0274H01L21/3081C07C43/21C07C49/84C07D213/80C07D221/16G03F7/004C07C2603/18C07D221/06C07D335/10C07D311/80C07D495/04C07D491/04G03F7/094H01L21/0332H01L21/02118H01L21/02282H01L21/31144H01L21/31116H01L21/31138C07C43/215C07C43/285C07D213/30C07D311/78C07D333/10C07D409/04C07D471/04G03F7/11
Inventor TACHIBANA, SEIICHIROWATANABE, TAKERUNIIDA, KEISUKENAGAI, HIROKOSAWAMURA, TAKASHIOGIHARA, TSUTOMUHESS, ALEXANDER EDWARDBREYTA, GREGORYSANDERS, DANIEL PAULWOJTECKI, RUDY J.
Owner SHIN ETSU CHEM IND CO LTD
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