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Image sensor with shared voltage converter for global shutter operation

An image sensor, sharing voltage technology, applied in the field of image sensor, can solve the problem of unable to capture image, blurred image, etc.

Inactive Publication Date: 2007-01-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This sequential transfer can result in blurred images and cannot be used in overall shutter operation to capture an image uniformly across the pixel array

Method used

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  • Image sensor with shared voltage converter for global shutter operation
  • Image sensor with shared voltage converter for global shutter operation
  • Image sensor with shared voltage converter for global shutter operation

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Embodiment Construction

[0029] figure 1 is a block diagram of a CMOS (Complementary Metal Oxide Semiconductor) image sensor according to a preferred embodiment of the present invention. The CMOS image sensor 10 includes a pixel array 100 , a controller 200 and a signal processor 300 . The pixel array 100 includes rows and columns of pixels for converting images into electrical signals. Each pixel photoelectrically converts the light of the image to generate a corresponding voltage at a corresponding location on the array.

[0030] The controller 200 generates control signals for driving pixels of the pixel array 100 . The signal processor 300 converts corresponding voltages from pixels of the pixel array 100, including converting analog voltages into noise-canceled digital signals.

[0031] In one embodiment of the present invention, the pixel array 100 is composed of an array of active pixel sensor (APS) cells 1000, each APS cell having a plurality of pixels sharing a voltage converter.

[0032]...

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Abstract

Each of a plurality of pixels includes a respective photo-converting unit and a respective charge storing unit. The respective photo-converting unit generates respective charge from an image, and the respective charge storing unit stores the respective charge. The respective charges are generated and stored simultaneously, and converted into respective voltages sequentially by a shared voltage converter.

Description

[0001] This application claims priority from Korean Patent Application No. 2005-64417 filed with the Korean Intellectual Property Office on Jul. 15, 2005, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates generally to image sensors, and more particularly to performing a global shutter operation among multiple pixels using a shared voltage converter. Background technique [0003] Image sensors that convert images into electrical signals are generally classified as Charge Coupled Device (CCD) type image sensors or Complementary Metal Oxide Semiconductor (CMOS) type image sensors according to the mechanism of accumulation of electrons or holes and charge transfer. The CMOS image sensor is also referred to as CIS. [0004] The CCD type image sensor transfers accumulated electrons to an output port using a gate pulse for charge coupling, and then converts the transferred electrons into a voltage. A photodiod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N3/15H04N5/335
CPCH04N5/335H04N25/00H04N25/60H04N25/77
Inventor 安正蔡李容僖朴钟银
Owner SAMSUNG ELECTRONICS CO LTD
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